Very low dislocation density GaAs on Si using superlattices grown by MOCVD
Tetsuo Soga, Hironobu Nishikawa, Takashi Jimbo, Masayoshi UmenoVolume:
107
Year:
1991
Language:
english
Pages:
4
DOI:
10.1016/0022-0248(91)90506-z
File:
PDF, 255 KB
english, 1991