High quality GaAs on Si using Si0.04Ge0.96/Ge buffer layers
R. Venkatasubramanian, M.L. Timmons, J.B. Posthill, B.M. Keyes, R.K. AhrenkielVolume:
107
Year:
1991
Language:
english
Pages:
5
DOI:
10.1016/0022-0248(91)90508-3
File:
PDF, 325 KB
english, 1991