Finite interface effects for thin GaInAs/InP quantum wells...

Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence

J. Camassel, J.P. Laurenti, S. Juillaguet, F. Reinhardt, K. Wolter, H. Kurz, D. Grützmacher
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Volume:
107
Year:
1991
Language:
english
Pages:
6
DOI:
10.1016/0022-0248(91)90518-a
File:
PDF, 368 KB
english, 1991
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