Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates
R. Bhat, C. Caneau, C.E. Zah, M.A. Koza, W.A. Bonner, D.M. Hwang, S.A. Schwarz, S.G. Menocal, F.G. FavireVolume:
107
Year:
1991
Language:
english
Pages:
7
DOI:
10.1016/0022-0248(91)90556-k
File:
PDF, 482 KB
english, 1991