Gas-source MBE growth and n-type doping of AlGaAs using TEG, TEA, AsH3 and Si2H6
T. Fujii, H. Ando, A. Sandhu, H. Ishikawa, Y. SugiyamaVolume:
107
Year:
1991
Language:
english
Pages:
6
DOI:
10.1016/0022-0248(91)90597-x
File:
PDF, 422 KB
english, 1991