Gas-source MBE growth and n-type doping of AlGaAs using...

Gas-source MBE growth and n-type doping of AlGaAs using TEG, TEA, AsH3 and Si2H6

T. Fujii, H. Ando, A. Sandhu, H. Ishikawa, Y. Sugiyama
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Volume:
107
Year:
1991
Language:
english
Pages:
6
DOI:
10.1016/0022-0248(91)90597-x
File:
PDF, 422 KB
english, 1991
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