The substrate—epitaxial interface of GaAs and InP grown by GSMBE
K. Tappura, A. Salokatve, K. Rakennus, H. Asonen, M. PessaVolume:
107
Year:
1991
Language:
english
Pages:
2
DOI:
10.1016/0022-0248(91)90614-b
File:
PDF, 113 KB
english, 1991