InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz
Lecourt, F., Ketteniss, N., Behmenburg, H., Defrance, N., Hoel, V., Eickelkamp, M., Vescan, A., Giesen, C., Heuken, M., De Jaeger, J.-C.Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2011.2166949
Date:
November, 2011
File:
PDF, 129 KB
english, 2011