Growth behavior of (C2H5)2GaCl and AsH3 based GaAs: low reactor pressure and temperatures
T.F. Kuech, R. Potemski, F. CardoneVolume:
124
Year:
1992
Language:
english
Pages:
8
DOI:
10.1016/0022-0248(92)90478-2
File:
PDF, 710 KB
english, 1992