Volume 124; Issue 1-4

Journal of Crystal Growth

Volume 124; Issue 1-4
1

Editorial Board

Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 138 KB
english, 1992
2

Preface

Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 111 KB
english, 1992
6

CBE growth of (001) GaAs: RHEED and RD studies

L. Samuelson, B. Junno, G. Paulson, J.O. Fornell, L. Ledebo
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 616 KB
english, 1992
8

Enhancement of AsH3 decomposition on highly doped p-GaAs surfaces

Naoki Kobayashi, Yoshiharu Yamauchi
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 377 KB
english, 1992
10

Two-dimensional modeling of the growth of GaAs from (C2H5)2GaCl and AsH3

M.P. Hierlemann, T.F. Kuech
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 831 KB
english, 1992
15

Triisopropylindium for OMVPE growth

C.H. Chen, C.T. Chiu, G.B. Stringfellow, R.W. Gedridge Jr.
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 394 KB
english, 1992
18

The LP-MOVPE of GaInAs with saturated group III precursors

R. Hövel, W. Brysch, N. Neumann, K. Heime, L. Pohl
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 512 KB
english, 1992
21

MOVPE growth of InGaAsP using TBA and TBP with extremely low V/III ratio

M. Horita, M. Suzuki, Y. Matsushima
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 433 KB
english, 1992
22

Comparison of the As compounds tertiarybutylarsine and monoethylarsine

R. Hövel, N. Neumann, K. Heime
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 510 KB
english, 1992
24

Tertiarybutyldimethylantimony for InSb growth

C.H. Chen, K.T. Huang, D.L. Drobeck, G.B. Stringfellow
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 645 KB
english, 1992
38

Novel selective area growth of AlGaAs and AlAs with HCl gas by MOVPE

K. Shimoyama, Y. Inoue, K. Fujii, H. Gotoh
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 564 KB
english, 1992
39

Studies on the selective OMVPE of (Ga,In)/(As,P)

C. Caneau, R. Bhat, M.R. Frei, C.C. Chang, R.J. Deri, M.A. Koza
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 605 KB
english, 1992
44

The elimination of H2O and SiH4 in AsH3

Takuya Ikeda, Hiroshi Noda, Koh Matsumoto
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 515 KB
english, 1992
46

Uniform growth of InSb on GaAs in a rotating disk reactor by LP-MOVPE

M.A. McKee, B.-S. Yoo, R.A. Stall
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 484 KB
english, 1992
47

Application of an electrochemical arsine generator on a high throughput MOVPE reactor

A.A. Burk Jr.
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 666 KB
english, 1992
50

OMCVD growth of InP, InGaAs, and InGaAsP on (110) InP substrates

R. Bhat, M.A. Koza, D.M. Hwang, M.J.S.P. Brasil, R.E. Nahory, K. Oe
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 569 KB
english, 1992
53

Optical characterization of MOVPE grown GaInP layers

M. Moser, C. Geng, E. Lach, I. Queisser, F. Scholz, H. Schweizer, A. Dörnen
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 515 KB
english, 1992
54

Photoluminescence mapping of AlGaAs/GaAs HBT layer sequences

H. Tews, P. Zwicknagl, R. Neumann, M. Kärner
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 672 KB
english, 1992
56

Growth of semi-insulating InGaAsP alloys using low-pressure MOCVD

D.G. Knight, W.T. Moore, R.A. Bruce
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 505 KB
english, 1992
58

MOVPE growth of InSb on GaAs substrates

R.M. Graham, N.J. Mason, P.J. Walker, D.M. Frigo, R.W. Gedridge Jr.
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 800 KB
english, 1992
59

Epitaxial growth of InSb on semi-insulating GaAs by low pressure MOCVD

Yasuo Iwamura, Naozo Watanabe
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 484 KB
english, 1992
60

Growth of GaSb and InSb by low-pressure plasma MOVPE

M. Behet, B. Stoll, W. Brysch, K. Heime
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 533 KB
english, 1992
61

Growth of GaSb and GaAsSb in the single phase region by MOVPE

Da-cheng Lu, Xianglin Liu, Du Wang, Lanying Lin
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 441 KB
english, 1992
62

Lattice-matched growth of InPSb on InAs by low-pressure plasma MOVPE

M. Behet, B. Stoll, K. Heime
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 530 KB
english, 1992
65

InGaSb/GaSb photodiodes grown by MOVPE

F. Pascal-Delannoy, N.J. Mason, G. Bougnot, P.J. Walker, J. Bougnot, A. Giani, G.G. Allogho
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 420 KB
english, 1992
67

MOVPE growth of GaAs using a N2 carrier

Hilde Hardtdegen, M. Hollfelder, R. Meyer, R. Carius, H. Münder, S. Frohnhoff, D. Szynka, H. Lüth
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 646 KB
english, 1992
68

The effects of oxygen impurity in TMA on AlGaAs layers grown by MOVPE

M. Hata, H. Takata, T. Yako, N. Fukuhara, T. Maeda, Y. Uemura
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 511 KB
english, 1992
69

Current status of GaN and related compounds as wide-gap semiconductors

T. Matsuoka
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 519 KB
english, 1992
70

MOVPE growth of cubic GaN on GaAs using dimethylhydrazine

S. Miyoshi, K. Onabe, N. Ohkouchi, H. Yaguchi, R. Ito, S. Fukatsu, Y. Shiraki
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 325 KB
english, 1992
71

Intrinsic carbon incorporation in very high purity MOVPE GaAs

M.C. Hanna, Z.H. Lu, E.G. Oh, E. Mao, A. Majerfeld
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 543 KB
english, 1992
73

The effects of substrate misorientation on silicon doping efficiency in MOVPE grown GaAs

Alan G. Thompson
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 589 KB
english, 1992
74

Incorporation of zinc in MOCVD growth of Ga0.5In0.5P

Sarah R. Kurtz, J.M. Olson, A.E. Kibbler, K.A. Bertness
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 627 KB
english, 1992
76

High doping performance of lattice matched GaInP on GaAs

F. Scheffer, F. Buchali, A. Lindner, Q. Liu, A. Wiersch, W. Prost
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 525 KB
english, 1992
77

Simulation of carbon doping of GaAs during MOVPE

Maurizio Masi, Harsono Simka, Klavs F. Jensen, Thomas F. Kuech, Robert Potemski
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 829 KB
english, 1992
78

MOCVD methods for fabricating GaAs quantum wires and quantum dots

Takashi Fukui, Hisao Saito, Makoto Kasu, Seigo Ando
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 333 KB
english, 1992
88

Study of interrupted MOVPE growth of InGaAs/InP superlattice

X.S. Jiang, A.R. Clawson, P.K.L. Yu
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 514 KB
english, 1992
92

Characterization of AlGaP/GaP heterostructures grown by MOVPE

K. Adomi, N. Noto, A. Nakamura, T. Takenaka
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 469 KB
english, 1992
99

MOVPE growth of p-type ZnSe using dimethylaminolithium as the dopant

K. Yanashima, K. Koyanagi, K. Hara, J. Yoshino, H. Kukimoto
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 332 KB
english, 1992
100

MOCVD growth of CuInSe2: first results

B. Sagnes, A. Salesse, M.C. Artaud, S. Duchemin, J. Bougnot, G. Bougnot
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 705 KB
english, 1992
106

Properties of p-on-n heterojunctions made with MCT grown by MOCVD

S. Oguz, D.L. Lee, R.J. Olson Jr., E. Sullivan
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 350 KB
english, 1992
107

Atomic layer epitaxy of CdTe on GaAs, by organometallic vapor phase epitaxy

W.S. Wang, H.E. Ehsani, I.B. Bhat
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 642 KB
english, 1992
129

AlGaAs/GaAs heterojunction bipolar transistors with C-doped base grown by AP-MOVPE

S. Tanaka, M. Ito, M. Ikeda, T. Kikuta
Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 394 KB
english, 1992
132

Author index

Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 944 KB
english, 1992
133

Subject index

Journal:
Journal of Crystal Growth
Year:
1992
Language:
english
File:
PDF, 281 KB
english, 1992