Ga1−xInxAs/InAsyP1−y/InP photodiodes for the 1.6 to 2.4 μm...

Journal of Crystal Growth 1992 Vol. 124; Iss. 1-4

Ga1−xInxAs/InAsyP1−y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD

M.A. di Forte-Poisson, C. Brylinski, J. di Persio, X. Hugon, B. Vilotitch, C. Le Noble
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Volume:
124
Year:
1992
Language:
english
Pages:
10
DOI:
10.1016/0022-0248(92)90552-t
File:
PDF, 625 KB
english, 1992
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