Growth methods for high purity Ge and Ge: Ga homoepitaxy

Journal of Crystal Growth 1993 Vol. 129; Iss. 3-4

Growth methods for high purity Ge and Ge: Ga homoepitaxy

James E. Huffman, Nancy L. Casey
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Volume:
129
Year:
1993
Language:
english
Pages:
7
DOI:
10.1016/0022-0248(93)90486-g
File:
PDF, 737 KB
english, 1993
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