Volume 129; Issue 3-4

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Journal of Crystal Growth
Volume 129; Issue 3-4

Journal of Crystal Growth

Volume 129; Issue 3-4

1

Imperfections in II–VI semiconductor layers epitaxially grown by organometallic chemical vapour deposition on GaAs

G. Patriarche, R. Triboulet, Y. Marfaing, J. Castaing

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 957 KB

english, 1993

2

The significance of mass and heat transfer during crystal growth from solutions and melts

Masakuni Matsuoka, John Garside

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 687 KB

english, 1993

3

Investigation by electron diffraction microscopy of (RE)Ba2Cu3O6+xSy polycrystalline ceramic compounds: Interpretation of unexpected superstructures and influence of secondary phases

R. Cloots, A. Rulmont, T. Krekels, G. Van Tendeloo, P. Diko, M. Ausloos

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 972 KB

english, 1993

4

Observation of defects in semiconductor-on-insulator (SOI) wafers by a nondestructive bulk micro-defect analyzer

H. Wada, K. Moriya

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 570 KB

english, 1993

5

Growth mechanism and crystal habit of RBa2Cu3O7-x (R = Y, Tm, Gd) single crystals

S.X. Shang, H. Wang, X.L. Sheng

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 630 KB

english, 1993

6

Helium diffraction study of the nucleation and growth of palladium clusters on MgO (100)

C.R. Henry, M. Meunier, S. Morel

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 440 KB

english, 1993

7

Liquid phase epitaxy of high-Tc superconductors

C. Klemenz, H.J. Scheel

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 1.48 MB

english, 1993

8

Growth of alloy substrates by liquid phase electroepitaxy; Theoretical considerations

T. Bryskiewicz, A. Laferrière

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 1.28 MB

english, 1993

9

Origin and formation mechanism of elliptic-shaped surface defect on GaAs layers grown by molecular beam epitaxy

Shigenori Takagishi, Hideki Yao, Hirotaro Mori

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 1.38 MB

english, 1993

10

Influence of some aminoacids on the spontaneous precipitation of calcium oxalate from high ionic strength solutions

Drago Škrtić, Helga Füredi-Milhofer

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 510 KB

english, 1993

11

Effect of substrate misorientation on tear-drop-like hillock defect densities in InP and GaInAsP grown by metalorganic chemical vapor deposition

M. Nakamura, S. Katsura, N. Makino, E. Ikeda, K. Suga, R. Hirano

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 1.49 MB

english, 1993

12

Growth and etching kinetics of tetragonal lysozyme

Lisa A. Monaco, Franz Rosenberger

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 2.96 MB

english, 1993

13

Crystal growth of AgGaS2 by the Bridgman-Stockbarger and travelling heater methods

E. Post, V. Krämer

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 577 KB

english, 1993

14

Optical study of surface melting on ice

Michael Elbaum, S.G. Lipson, J.G. Dash

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 1.92 MB

english, 1993

15

Analyses of the characteristics of crystal growth from solution under microgravity III. Effects of the orientation of microgravity

Zhengyi Xu, Peiwen Ge, Chongru Huo, Zhenhe Zhu

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 710 KB

english, 1993

16

Growth, twinning and etch figures of ferroelectric/ferroelastic dendritic BiFeO3 single domain crystals

F. Kubel, H. Schmid

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 1.74 MB

english, 1993

17

Growth methods for high purity Ge and Ge: Ga homoepitaxy

James E. Huffman, Nancy L. Casey

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 737 KB

english, 1993

18

Characterization of AlxGa1-xAs/AlyGa1-yAs/GaAs step multi-quantum wells on (001) GaAs by X-ray double-crystal diffraction

J.H. Li, Z.H. Mai, S.F. Cui, Z.H. Chen, M.H. Li

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 382 KB

english, 1993

19

Characterization of the perfection of Si1-xGex layers on silicon by x-ray methods

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 363 KB

english, 1993

20

Single crystal growth of V2B3 using the high-temperature aluminium solution method

Shigeru Okada, Torsten Lundström

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 443 KB

english, 1993

21

Influence of thermal bouyancy on fibrous eutectic growth I. Segregation results in the Sn-Cu6Sn5 system

B. Drevet, J.P. Garandet, D. Camel, J.J. Favier

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 784 KB

english, 1993

22

Effect of doping MoSe2 single crystals with rhenium

M.K. Agarwal, P.D. Patel, S.K. Gupta

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 369 KB

english, 1993

23

Instability of III–V compound surfaces due to liquid phase formation

S.Yu. Karpov, Yu.V. Kovalchuk, V.E. Myachin, Yu.V. Pogorelskii

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 637 KB

english, 1993

24

Temperature dependence of the growth form of negative crystal in an ice single crystal and evaporation kinetics for its surfaces

Yoshinori Furukawa, Shigetsugu Kohata

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 2.03 MB

english, 1993

25

Vacancy concentration wafer mapping in silicon

H. Zimmermann, U. Gösele, M. Seilenthal, P. Eichinger

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 1.17 MB

english, 1993

26

Bulk-flow versus thermal-capillary models for Czochralski growth of semiconductors

Qiang Xiao, Jeffrey J. Derby

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 1.59 MB

english, 1993

27

The growth mechanism of 〈1010〉 oriented AlN thin films by low-frequency plasma-enhanced metalorganic chemical vapour deposition process

G.Y. Meng, N. Azéma, B. Cros, J. Durand, L. Cot

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 1.01 MB

english, 1993

28

Plasma-enhanced chemical vapour deposition of A1N (1010) on Si (100): Microstructural study of the interlayers

N. Azéma, J. Durand, R. Berjoan, C. Dupuy, J.L. Balladore, L. Cot

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 866 KB

english, 1993

29

Growth of wide band gap immiscible II–VI alloys by metalorganic vapor phase epitaxy

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 464 KB

english, 1993

30

Investigation of optical inhomogeneities in KTiOPO4 (KTP) single crystals grown from high-temperature tungsten-containing solutions

D.P. Shumov, M.P. Tarassov, V.S. Nikolov

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 521 KB

english, 1993

31

On the formation of etch grooves at impurity striations and growth sector boundaries in crystals grown from solutions

K. Sangwal, I. Owczarek

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 2.19 MB

english, 1993

32

Physical vapor transport of cadmium telluride in closed ampoules

Witold Palosz, Heribert Wiedemeier

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 1.13 MB

english, 1993

33

Interfacial wave theory of dendritic growth from a binary mixture: A comparison with experiments

Jian-Jun Xu, Zhong-Xiong Pan

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 1.13 MB

english, 1993

34

Growth of NiS2 single crystals by sublimation under controlled sulfur pressure

U. Tanaka, T. Komori, N. Ishizawa, F. Marumo, Y. Noda

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 255 KB

english, 1993

35

CdTe(111) growth on misoriented Si(100) substrates by hot-wall epitaxy

H. Tatsuoka, H. Kuwabara, Y. Nakanishi, H. Fujiyasu

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 390 KB

english, 1993

36

Voids and channels in pentagonal crystals

A.E. Romanov, I.A. Polonsky, V.G. Gryaznov, S.A. Nepijko, T. Junghanns, N.J. Vitrykhovski

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 985 KB

english, 1993

37

Directional solidification of CoO-ZrO2 eutectics

Jun-ichi Echigoya, Shigeyuki Hayashi

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 1.09 MB

english, 1993

38

Application of real time phase shift interferometer to the measurement of concentration field

Kazuo Onuma, Katsuo Tsukamoto, Suezou Nakadate

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 1.56 MB

english, 1993

39

Structural analysis of as-deposited and annealed low-temperature gallium arsenide

R.J. Matyi, M.R. Melloch, J.M. Woodall

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 898 KB

english, 1993

40

Metalorganic precursors for vapour phase epitaxy

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 4.29 MB

english, 1993

41

Single-crystalline diamond film growth

Wang Qimin, Chen Qinggui, Shi Rihua, Zhu Weibing, Dong Qiwei, Dong Rongkang

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 400 KB

english, 1993

42

Ultrasonic etching of GaAs in CrO3-HF aqueous solutions

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 423 KB

english, 1993

43

Regrowth of InP by MOVPE on dry-etched heterostructures of InP-GaInAsP

A. Catana, R.F. Broom, R. Germann, P. Roentgen

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 427 KB

english, 1993

44

Selective InGaAs growth at low temperature by metalorganic chemical vapor deposition (MOCVD) with high-speed rotating susceptor

Minoru Ida, Kenji Kurishima, Takashi Kobayashi

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 525 KB

english, 1993

45

Growth of YBa2Cu3O7-δ single crystals on seeds by a modified top seeded solution growth (TSSG) technique

A.A. Zhokhov, G.A. Emel'chenko

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 311 KB

english, 1993

46

Poisoning of calcite growth viewed in the atomic force microscope (AFM)

Andrew J. Gratz, Paul E. Hillner

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 610 KB

english, 1993

47

Erratum

Journal:

Journal of Crystal Growth

Year:

1993

File:

PDF, 19 KB

1993

48

Author index

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 484 KB

english, 1993

49

Subject index

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 185 KB

english, 1993

50

Instructions to authors

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 115 KB

english, 1993