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In-situ dry etching of InP using phosphorus trichloride and regrowth inside a chemical beam epitaxial growth chamber
W.T. Tsang, R. Kapre, P.F. Sciortino Jr.Volume:
136
Year:
1994
Language:
english
Pages:
8
DOI:
10.1016/0022-0248(94)90381-6
File:
PDF, 1.31 MB
english, 1994