Volume 136; Issue 1-4

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Journal of Crystal Growth
Volume 136; Issue 1-4

Journal of Crystal Growth

Volume 136; Issue 1-4

1

Editorial Board

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 133 KB

english, 1994

2

Preface

Y. Shiraki, M. Konagai, S. Hiyamizu

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 138 KB

english, 1994

3

The use of organometallic group-V sources for the metalorganic molecular beam epitaxy growth of In0.48Ga0.52P/GaAs and In0.53Ga0.47As/InP heterojunction bipolar device structures

E.A. Beam III, H.F. Chau, T.S. Henderson, W. Liu, A.C. Seabaugh

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 1.03 MB

english, 1994

4

The impact of impurity incorporation on heterojunction bipolar transistors grown by metalorganic molecular beam epitaxy

C.R. Abernathy, F. Ren, S.J. Pearton, P.W. Wisk, D.A. Bohling, G.T. Muhr, A.C. Jones, M. Stavola, D.M. Kozuch

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 639 KB

english, 1994

5

Selective area growth of III/V materials in metalorganic molecular beam epitaxy (chemical beam epitaxy)

Harald Heinecke

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 1.09 MB

english, 1994

6

Chemical beam epitaxy as a breakthrough technology for photovoltaic solar energy applications

Masafumi Yamaguchi, Terunori Warabisako, Hideo Sugiura

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 524 KB

english, 1994

7

Selective-area epitaxy of GaAs using a GaN mask in in-situ processes

Seikoh Yoshida, Masahiro Sasaki, Hidenori Kawanishi

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 597 KB

english, 1994

8

In-situ dry etching of InP using phosphorus trichloride and regrowth inside a chemical beam epitaxial growth chamber

W.T. Tsang, R. Kapre, P.F. Sciortino Jr.

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 1.31 MB

english, 1994

9

The growth of resonant tunneling hot electron transistors using chemical beam epitaxy

W.L. Chen, G.O. Munns, L. Davis, P.K. Bhattacharya, G.I. Haddad

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 481 KB

english, 1994

10

Comparison of chemical beam epitaxy and metalorganic chemical vapour deposition for highly strained multiple quantum well InGaAsP/InP 1.5 μm lasers

D.C. Houghton, M. Davies, T. Sudersena Rao, M. Dion

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 692 KB

english, 1994

11

Electroabsorption and modulator characteristics of InGaAsP multiple quantum well laser structures grown by laser-assisted metalorganic molecular beam epitaxy

H. Sugiura, K. Wakita, R. Iga, T. Yamada

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 431 KB

english, 1994

12

Advances in the understanding of chemical beam epitaxy growth mechanisms

T. Martin, R.W. Freer, C.R. Whitehouse, P.A. Lane

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 820 KB

english, 1994

13

Reflection high energy electron diffraction and reflectance difference studies of surface anisotropy in InGaAs chemical beam epitaxy on flat and vicinal (001) GaAs

B. Junno, G. Paulsson, M. Miller, L. Samuelson

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 397 KB

english, 1994

14

Theoretical consideration on the metalorganic molecular beam epitaxy growth mechanism of III–V semiconductors by molecular orbital calculation

Y. Okuno, H. Asahi, S. Gonda

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 520 KB

english, 1994

15

In-situ reflection high-energy electron diffraction observation of laser-triggered GaP growth in chemical beam epitaxy

Masahiro Yoshimoto, Tadao Hashimoto, Pablo Vaccaro, Hiroyuki Matsunami

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 409 KB

english, 1994

16

Ab initio study on the reaction of trimethylgallium with hydrogen molecule

Yoshiko Someya Hiraoka, Masao Mashita

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 333 KB

english, 1994

17

The role of excess arsenic during the metalorganic molecular beam epitaxial growth of GaAs from trimethylgallium and As2

T. Kaneko, O. Naji, T.S. Jones, B.A. Joyce

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 450 KB

english, 1994

18

Adsorption of carbon-related species onto GaAs(001), (011), and (111) surfaces exposed to trimethylgallium

S. Goto, H. Ohno, Y. Nomura, Y. Morishita, Y. Katayama

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 433 KB

english, 1994

19

Modulated molecular beam mass spectrometry studies of the growth of GaAs and InxGa1−xAs using tri-isobutylgallium

C.L. Levoguer, J.S. Foord, G.J. Davies, P.J. Skevington

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 437 KB

english, 1994

20

Morphology on GaAs surfaces grown by metalorganic chemical vapor deposition and molecular beam epitaxy

Kenji Ikuta, Jiro Osaka, Haruki Yokoyama

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 640 KB

english, 1994

21

Chemical/surface mechanistic considerations in the design of novel precursors for metalorganic molecular beam epitaxy

David A. Bohling, Cammy R. Abernathy, Klavs F. Jensen

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 701 KB

english, 1994

22

Investigations of the growth of GaAs using stable adducts of gallane

J.S. Foord, T.J. Whitaker, D. O'Hare, A.C. Jones

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 483 KB

english, 1994

23

Some comparisons of chemical beam epitaxy InGaAs/InP growth using triethylgallium, triisopropylgallium and triisobutylgallium sources

G.J. Davies, P.J. Skevington, J.C. Morris, A.C. Jones, S. Rushworth, J.S. Foord, C.L. Levoguer

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 454 KB

english, 1994

24

Monoethylarsine as a novel replacement for unprecracked arsine source in the chemical beam epitaxial growth of GaAs using trimethylgallium and triethylgallium

Seong-ju Park, Jeong-rae Ro, Jae-ki Sim, El-hang Lee

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 423 KB

english, 1994

25

Low carbon incorporation in GaAs grown by chemical beam epitaxy using unprecracked arsine, trimethylgallium and triethylgallium

Seong-ju Park, Jeong-rae Ro, Jae-ki Sim, El-hang Lee

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 450 KB

english, 1994

26

Chemical beam epitaxial growth of InGaAs using a new precursor tri-isopropylgallium

T.H. Chiu, M.D. Williams, F.G. Storz, J.F. Ferguson

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 322 KB

english, 1994

27

Comparison of triethylgallium and its amine-adduct on gas-phase reaction with trimethylamine-alane

K. Miyakoshi, K. Fujii, T. Hidaka, I. Suemune, M. Nakagawa, T. Ogawa

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 334 KB

english, 1994

28

Plasma-cracked supply of group V and group VI elements for low temperature epitaxy

T. Hariu, S. Yamauchi, S.F. Fang, T. Ohshima, T. Hamada

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 292 KB

english, 1994

29

Metalorganic molecular beam epitaxy of III–V compounds using tertiarybutyl-V as group-V sources

Yuichi Sasaki, Yuto Fukuma, Tadayoshi Abe, Ziqiang Zhu, Takafumi Yao, Jun Takehara, Minoru Kitagawa

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 330 KB

english, 1994

30

Influence of hydride purity on InP and InAlAs grown by chemical beam epitaxy

G.O. Munns, W.L. Chen, M.E. Sherwin, D. Knightly, G.I. Haddad, L. Davis, P.K. Bhattacharya

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 470 KB

english, 1994

31

One-step growth of buried heterostructures by chemical beam epitaxy over patterned InP substrates

A. Rudra, H. Sugiura, J. Ling, J.M. Bonard, J.D. Ganière, M. de Fays, D. Araujo, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 479 KB

english, 1994

32

Chemical beam epitaxy of InP on planar and non-planar substrates

T.Sudersena Rao, C. Lacelle, M. Davies, R. Barber, P. Chow-Chong, J. McCaffery, S.J. Rolfe, A.P. Roth, B. Benyon, B. Foster

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 1.01 MB

english, 1994

33

Effect of the addition of an elemental Ga flux on the metalorganic molecular beam epitaxial growth of heavily carbon-doped InGaAs

Jun-ichi Shirakashi, Ricardo T. Yoshioka, Akifumi Miyano, Makoto Konagai, Kiyoshi Takahashi

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 371 KB

english, 1994

34

Heavily carbon-doped p-type GaAs and In0.53Ga0.47As grown by gas-source molecular beam epitaxy using carbon tetrabromide

C.W. Tu, B.W. Liang, T.P. Chin

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 351 KB

english, 1994

35

InP and related compounds grown on (110) InP substrates by metalorganic molecular beam epitaxy (chemical beam epitaxy)

M. Mitsuhara, M. Okamoto, R. Iga, T. Yamada, H. Sugiura

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 455 KB

english, 1994

36

Short-pulse chemical beam epitaxy

Suian Zhang, Jie Cui, Akihiko Tanaka, Yoshinobu Aoyagi

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 283 KB

english, 1994

37

Metalorganic molecular beam epitaxy growth of GaAs on patterned GaAs substrates

D. Marx, H. Asahi, X.F. Liu, Y. Okuno, K. Inoue, S. Gonda, S. Shimomura, S. Hiyamizu

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 622 KB

english, 1994

38

Surface emitting lasers grown by chemical beam epitaxy

T. Miyamoto, T. Uchida, N. Yokouchi, K. Iga

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 521 KB

english, 1994

39

InGaAs(0.98 μm)/GaAs vertical cavity surface emitting laser grown by gas-source molecular beam epitaxy

Y.M. Houng, M.R.T. Tan, B.W. Liang, S.Y. Wang, L. Yang, D.E. Mars

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 424 KB

english, 1994

40

Carbon-doped InGaP/GaAs/InGaP double heterojunction bipolar transistors with a very low 1/f noise corner frequency of 108 kHz grown by chemical beam epitaxy

Y.K. Chen, R. Kapre, W.T. Tsang, A. Tate, D.A. Humphrey, L. Fan

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 289 KB

english, 1994

41

Chemical beam epitaxial growth of GaInAs(P)/InP heterostructures for laser applications

H. Rothfritz, R. Müller, C. Buchegger, G. Tränkle, G. Weimann

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 389 KB

english, 1994

42

The effect of emitter layer variations on the current gain of AlGaAs-GaAs heterojunction bipolar transistors grown by chemical beam epitaxy

W.T. Moore, A.J. SpringThorpe, T.P. Lester, S. Eicher, R.K. Surridge, J. Hu, C.J. Miner

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 406 KB

english, 1994

43

Quasi-planar GaAs heterojunction bipolar transistor device entirely grown by chemical beam epitaxy

F. Alexandre, D. Zerguine, P. Launay, J.L. Benchimol, M. Berz, B. Sermage, D. Komatitsch, M. Juhel

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 510 KB

english, 1994

44

Surface reactivity and stability of Ga-deposited GaAs oxide mask for selective area growth of GaAs

Masahiro Sasaki, Seikoh Yoshida

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 437 KB

english, 1994

45

Optical properties of InGaAs/InP double-heterostructures selectively grown by chemical beam epitaxy

Mitsunobu Gotoda, Yoshinori Nomura, Toshiro Isu, Shigemitsu Maruno

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 300 KB

english, 1994

46

Selective area epitaxy of GaSb and AlGaSb by metalorganic molecular beam epitaxy

X.F. Liu, H. Asahi, Y. Okuno, D. Marx, K. Inoue, S. Gonda

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 646 KB

english, 1994

47

The selectively grown permeable junction base transistor with a gate of highly carbon doped GaAs

G. Mörsch, J. Gräber, M. Kamp, M. Hollfelder, H. Lüth

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 616 KB

english, 1994

48

Chemical beam epitaxy selectively-regrown n+-GaAs layer on metalorganic chemical vapor deposition grown GaInP/GaInAs/GaAs pseudomorphic high electron mobility transistor structure

P. Bove, K. Ono, K. Joshin, H. Tanaka, K. Kasai, J. Komeno

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 735 KB

english, 1994

49

Gas source molecular beam epitaxy growth of GaP/AlP short period superlattices

H. Asahi, M. Enokida, K. Asami, J.H. Kim, T. Watanabe, R.K. Soni, S. Gonda

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 386 KB

english, 1994

50

A new technique for fabricating InGaAsP superlattice by laser-assisted metalorganic molecular beam epitaxy

Ryuzo Iga, Takeshi Yamada, Hideo Sugiura

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 433 KB

english, 1994

51

Dynamics of island formation in the growth of InAs/InP quantum wells

A. Rudra, R. Houdré, J.F. Carlin, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 306 KB

english, 1994

52

Strain and As species dependent group V incorporation in GaAsP during gas source molecular beam epitaxy

J.E. Cunningham, M.B. Santos, K.W. Goossen, T.H. Chiu, M.D. Williams, W. Jan, F. Storz

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 402 KB

english, 1994

53

Gas source molecular beam epitaxy and X-ray absorption fine structure characterization of InGaAs/InP short period superlattices

Teruo Mozume, Hideo Kashima, Kazuhiko Hosomi, Kiyoshi Ogata, Kazuhumi Suenaga, Asao Nakano

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 439 KB

english, 1994

54

Growth parameter optimization of short period ( < 50 Å) InGaAs/InP short period superlattices by chemical beam epitaxy for photonic devices

C. Rigo, A. Antolini, C. Cacciatore, C. Coriasso, L. Lazzarini, G. Salviati

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 342 KB

english, 1994

55

Growth of GaInAs(P)/InP multi-quantum barrier by chemical beam epitaxy

Y. Inaba, T. Uchida, N. Yokouchi, T. Miyamoto, K. Mori, F. Koyama, K. Iga

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 460 KB

english, 1994

56

Composition changes in GaxIn1−xAs/InP superlattice growth by chemical beam epitaxy

N. Yokouchi, Y. Inaba, T. Uchida, T. Miyamoto, K. Mori, F. Koyama, K. Iga

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 276 KB

english, 1994

57

High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy

Chunhui Yan, Dianzhao Sun, Hongxi Guo, Xiaobing Li, Shirong Zu, Yunheng Huang, Yiping Zheng, Meiying Kong

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 266 KB

english, 1994

58

Optical properties of InAs/AlSb superlattices grown by gas source molecular beam epitaxy

S.G. Kim, H. Asahi, M. Seta, K. Asami, S. Gonda, M. Yano, M. Inoue

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 420 KB

english, 1994

59

Gas-source molecular beam epitaxy and luminescence characterization of strained Si1−xGex/Si quantum wells

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, K. Okumura

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 585 KB

english, 1994

60

Determination of the sticking coefficient of disilane on Si(001) using the first reflection high energy electron diffraction oscillation period

K. Werner, S. Butzke, S. Radelaar, P. Balk

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 496 KB

english, 1994

61

Si dangling bonds on Si(100) surface during gas-source molecular beam epitaxy with Si2H6

Yuji Takakuwa, Tetsuji Yamaguchi, Nobuo Miyamoto

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 385 KB

english, 1994

62

Controlled carbonization of Si(001) surface using hydrocarbon radicals in ultrahigh vacuum

Tomoaki Hatayama, Yoichiro Tarui, Tastuo Yoshinobu, Takashi Fuyuki, Hiroyuki Matsunami

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 568 KB

english, 1994

63

Evidence for non-hydrogen desorption limited growth of Si from disilane at very low temperatures in gas source molecular beam epitaxy?

K. Werner, S. Butzke, S. Radelaar, P. Balk

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 444 KB

english, 1994

64

Hydrogen desorption rate and surface hydrogen coverage during isothermal annealing for Si2H6-adsorbed Si(100) surfaces

Tetsuhiro Horie, Yuji Takakuwa, Tetsuji Yamaguchi, Nobuo Miyamoto

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 417 KB

english, 1994

65

Facet formation mechanism of silicon selective epitaxial layer by Si ultrahigh vacuum chemical vapor deposition

Tohru Aoyama, Taeko Ikarashi, Keiko Miyanaga, Toru Tatsumi

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 656 KB

english, 1994

66

A Si1−xGex/Si single quantum well p-i-n structure grown by solid-source and gas source “hybrid” Si molecular beam epitaxy

Y. Kato, S. Fukatsu, N. Usami, Y. Shiraki

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 480 KB

english, 1994

67

Epitaxial growth of cubic and hexagonal GaN by gas source molecular beam epitaxy using a microwave plasma nitrogen source

H. Okumura, S. Misawa, T. Okahisa, S. Yoshida

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 312 KB

english, 1994

68

Growth of n- and p-ZnSe by gas source molecular beam epitaxy using metal Zn and H2Se

Masayuki Imaizumi, Yasuyuki Endoh, Ken-ichi Ohtsuka, Toshiro Isu

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 401 KB

english, 1994

69

Effect of photo-irradiation on the growth of ZnSe in metalorganic molecular beam epitaxy

Y. Kawakami, T. Toyoda, Sz. Fujita, Sg. Fujita

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 378 KB

english, 1994

70

In-situ probing of the ZnSe metalorganic molecular beam epitaxy growth process by surface photo-interference method

S. Tokita, M. Kobayashi, A. Yoshikawa

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 442 KB

english, 1994

71

Author index

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 500 KB

english, 1994

72

Subject index

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 114 KB

english, 1994

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