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Chemical beam epitaxial growth of InGaAs using a new precursor tri-isopropylgallium
T.H. Chiu, M.D. Williams, F.G. Storz, J.F. FergusonVolume:
136
Year:
1994
Language:
english
Pages:
4
DOI:
10.1016/0022-0248(94)90399-9
File:
PDF, 322 KB
english, 1994