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Heavily carbon-doped p-type GaAs and In0.53Ga0.47As grown by gas-source molecular beam epitaxy using carbon tetrabromide
C.W. Tu, B.W. Liang, T.P. ChinVolume:
136
Year:
1994
Language:
english
Pages:
4
DOI:
10.1016/0022-0248(94)90407-3
File:
PDF, 351 KB
english, 1994