![](/img/cover-not-exists.png)
InGaAs(0.98 μm)/GaAs vertical cavity surface emitting laser grown by gas-source molecular beam epitaxy
Y.M. Houng, M.R.T. Tan, B.W. Liang, S.Y. Wang, L. Yang, D.E. MarsVolume:
136
Year:
1994
Language:
english
Pages:
5
DOI:
10.1016/0022-0248(94)90412-x
File:
PDF, 424 KB
english, 1994