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Carbon-doped InGaP/GaAs/InGaP double heterojunction bipolar transistors with a very low 1/f noise corner frequency of 108 kHz grown by chemical beam epitaxy
Y.K. Chen, R. Kapre, W.T. Tsang, A. Tate, D.A. Humphrey, L. FanVolume:
136
Year:
1994
Language:
english
Pages:
4
DOI:
10.1016/0022-0248(94)90413-8
File:
PDF, 289 KB
english, 1994