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The effect of emitter layer variations on the current gain of AlGaAs-GaAs heterojunction bipolar transistors grown by chemical beam epitaxy
W.T. Moore, A.J. SpringThorpe, T.P. Lester, S. Eicher, R.K. Surridge, J. Hu, C.J. MinerVolume:
136
Year:
1994
Language:
english
Pages:
5
DOI:
10.1016/0022-0248(94)90415-4
File:
PDF, 406 KB
english, 1994