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Heavy carbon doping in low-pressure metalorganic vapor phase epitaxy of GaAs using trimethylarsenic — a comparison between the carrier gases N2 and H2
Hilde Hardtdegen, Chr. Ungermanns, K. Wirtz, D. Guggi, J. Herion, Hildegard Siekmann, H. LüthVolume:
145
Year:
1994
Language:
english
Pages:
7
DOI:
10.1016/0022-0248(94)91089-8
File:
PDF, 631 KB
english, 1994