Volume 145; Issue 1-4

Journal of Crystal Growth

Volume 145; Issue 1-4
1

Editorial Board

Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 150 KB
english, 1994
2

Preface

Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 135 KB
english, 1994
17

Growth of GaAsN by low-pressure metalorganic chemical vapor deposition using plasma-cracked N2

Michio Sato
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 426 KB
english, 1994
23

Order/disorder heterostructure in Ga0.5In0.5P with ΔEg = 160 meV

L.C. Su, I.H. Ho, N. Kobayashi, G.B. Stringfellow
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 647 KB
english, 1994
35

A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition

Y. Ohba, A. Hatano
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 394 KB
english, 1994
46

Facet growth of AlxGa1-xAs with HCl gas by metalorganic vapor phase epitaxy

K. Shimoyama, N. Hosoi, K. Fujii, H. Gotoh
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 722 KB
english, 1994
48

Selective area metalorganic chemical vapor deposition growth for hexagonal-facet lasers

S. Ando, N. Kobayashi, H. Ando
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 471 KB
english, 1994
56

Metalorganic chemical vapor deposition growth of GaAs on annealed Si in H2

A. Jono, A. Tachikawa, T. Aigo, A. Moritani
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 334 KB
english, 1994
58

Growth of GaSb on GaAs substrates

R.M. Graham, A.C. Jones, N.J. Mason, S. Rushworth, L. Smith, P.J. Walker
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 836 KB
english, 1994
61

Carbon doping in metalorganic vapor phase epitaxy

T.F. Kuech, J.M. Redwing
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 776 KB
english, 1994
67

The presence of isolated hydrogen donors in heavily carbon-doped GaAs

Hiroshi Fushimi, Kazumi Wada
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 642 KB
english, 1994
68

Ti doping of InP and GaInAs using TiCl4

C. Caneau, R. Bhat, S.A. Schwarz, M.A. Koza, C.E. Zah, D.M. Hwang, A. Rajhel, C. Chen
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 773 KB
english, 1994
74

Metalorganic vapor phase epitaxy using organic group V precursors

J. Komeno
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 385 KB
english, 1994
78

Growth of GaInAsSb using tertiarybutylarsine as arsenic source

M. Sopanen, T. Koljonen, H. Lipsanen, T. Tuomi
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 511 KB
english, 1994
80

Developments in metalorganic precursors for vapour phase epitaxy

A.C. Jones
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 588 KB
english, 1994
85

Metalorganic vapour phase epitaxy growth of Zn1-xMgxTe layers

B. Qu'Hen, R. Helbing, W.S. Kuhn, J.E. Bourée, A. Lusson, O. Gorochov
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 452 KB
english, 1994
87

Metalorganic vapor-phase epitaxy of p-type ZnSe and p/n junction diodes

Shizuo Fujita, Shigeo Fujita
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 411 KB
english, 1994
88

Novel nitrogen source materials in zinc selenide metalorganic chemical vapor deposition

Atsushi Kamata
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 344 KB
english, 1994
89

Cathodoluminescence characterization of nitrogen-doped ZnSe

B. Bollig, M. Blauermel, W. Taudt, M. Heuken
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 685 KB
english, 1994
106

Monolayer control of chemical beam etching

W.T. Tsang, T.H. Chiu, R.M. Kapre, J.F. Ferguson
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 558 KB
english, 1994
126

Zn diffusion mechanism in n-GaAs/Zn-AlGaAs/Se-AlGaAs structures

N. Fujii, T. Kimura, M. Tsugami, T. Sonoda, S. Takamiya, S. Mitsui
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 381 KB
english, 1994
143

Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Shuji Nakamura
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 520 KB
english, 1994
144

Low-pressure metalorganic vapor phase epitaxy of ZnSe-based light emitting diodes

H. Stanzl, K. Wolf, B. Hahn, W. Gebhardt
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 410 KB
english, 1994
148

Evaluation of p-n junction shift by the capacitance-voltage method

Norio Yamamoto, Mitsuo Yamamoto
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 469 KB
english, 1994
153

High-purity AlGaAs from methyl-based precursors using in-situ gettering of alkoxides

J.S. Roberts, J.P.R. David
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 111 KB
english, 1994
154

MOCVD growth on AlGaAs substrates

Yoshitaka Kohama, Yoshitaka Ohiso, Kouta Tateno, Chikara Amano, Takashi Kurokawa
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 133 KB
english, 1994
161

Highly uniform InGaAs quantum dots ( ≈ nm) grown by MOVPE on GaAs

J. Oshinowo, M. Nishioka, S. Ishida, Y. Arakawa
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 122 KB
english, 1994
162

Photoluminescence of buried InGaAs grown on nanoscale InP islands by MOVPE

H. Lipsanen, J. Ahopelto, T. Koljonen, M. Sopanen
Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 132 KB
english, 1994
164

Author index

Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 1.22 MB
english, 1994
165

Subject index

Journal:
Journal of Crystal Growth
Year:
1994
Language:
english
File:
PDF, 165 KB
english, 1994