Metalorganic molecular beam epitaxial growth of InP and InGaP with tertiarybutylphosphine for the application of carbon-doped base heterojunction bipolar transistors
Jun-ichi Shirakashi, Ricardo T. Yoshioka, Toshiaki Azuma, Fumihiko Fukuchi, Makoto Konagai, Kiyoshi TakahashiVolume:
145
Year:
1994
Language:
english
Pages:
6
DOI:
10.1016/0022-0248(94)91167-3
File:
PDF, 555 KB
english, 1994