Metalorganic molecular beam epitaxial growth of InP and...

Metalorganic molecular beam epitaxial growth of InP and InGaP with tertiarybutylphosphine for the application of carbon-doped base heterojunction bipolar transistors

Jun-ichi Shirakashi, Ricardo T. Yoshioka, Toshiaki Azuma, Fumihiko Fukuchi, Makoto Konagai, Kiyoshi Takahashi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
145
Year:
1994
Language:
english
Pages:
6
DOI:
10.1016/0022-0248(94)91167-3
File:
PDF, 555 KB
english, 1994
Conversion to is in progress
Conversion to is failed