Origin of Hot Carriers in InGaN-Based Quantum-Well Solar...

IEEE Electron Device Letters 2011 / 02 Vol. 32; Iss. 2

Origin of Hot Carriers in InGaN-Based Quantum-Well Solar Cells

Lai, K. Y., Lin, G. J., Chen, C.-Y., Lai, Y.-L., He, J. H.
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2010.2091619
Date:
February, 2011
File:
PDF, 317 KB
english, 2011
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