Volume 32; Issue 2

IEEE Electron Device Letters

Volume 32; Issue 2

1

A Novel Level Shifter Employing IGZO TFT

Binn Kim, Seung Chan Choi, Seung-Hee Kuk, Yong Ho Jang, Kwon-shik Park, Chang-Dong Kim, Min-Koo Han

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 375 KB

english, 2011

2

Low-Resistance Nonalloyed Ti/Al Ohmic Contacts on N-Face n-Type GaN via an Plasma Treatment

Su Jin Kim, Tae Yang Nam, Tae Geun Kim

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 254 KB

english, 2011

3

High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape

Lesecq, M., Hoel, V., Lecavelier des Etangs-Levallois, A., Pichonat, E., Douvry, Y., De Jaeger, J. C.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 173 KB

english, 2011

4

Ultralow Specific On-Resistance High-Voltage SOI Lateral MOSFET

Luo, Xiaorong, Fan, Jie, Wang, Yuangang, Lei, Tianfei, Qiao, Ming, Zhang, Bo, Udrea, Florin

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 512 KB

english, 2011

5

Memristive and Memcapacitive Characteristics of a Au/Ti– $\hbox{HfO}_{2}$-InP/InGaAs Diode

Sun, Jie, Lind, Erik, Maximov, Ivan, Xu, H. Q.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 200 KB

english, 2011

6

Sensitivity of Threshold Voltage to Nanowire Width Variation in Junctionless Transistors

Choi, Sung-Jin, Moon, Dong-Il, Kim, Sungho, Duarte, Juan P., Choi, Yang-Kyu

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 338 KB

english, 2011

7

Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays

Rosezin, R., Linn, E., Nielen, L., Kugeler, C., Bruchhaus, R., Waser, R.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 274 KB

english, 2011

8

Origin of Hot Carriers in InGaN-Based Quantum-Well Solar Cells

Lai, K. Y., Lin, G. J., Chen, C.-Y., Lai, Y.-L., He, J. H.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 317 KB

english, 2011

9

Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors

Mativenga, Mallory, Choi, Min Hyuk, Choi, Jae Won, Jang, Jin

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 433 KB

english, 2011

10

High Current-Gain Implantation-Free 4H-SiC Monolithic Darlington Transistor

Ghandi, Reza, Buono, Benedetto, Domeij, Martin, Ostling, Mikael

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 197 KB

english, 2011

11

Novel Sub-10-nm Gate-All-Around Si Nanowire Channel Poly-Si TFTs With Raised Source/Drain

Y. Lu, P. Kuo, Y. Wu, Y. Chen, T. Chao

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 495 KB

english, 2011

12

Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors

S. Liu, M. Yu, C. Lin, G. Ho, C. Cheng, C. Lai, C. Lin, Y. King, Y. Yeh

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 247 KB

english, 2011

13

Wong, S. M., Yu, H. Y., Li, J. S., Li, Y. L., Singh, N., Lo, Patrick G. Q., Kwong, D. L.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 450 KB

english, 2011

14

Kolluri, Seshadri, Brown, David F., Wong, Man Hoi, Dasgupta, S., Keller, Stacia, DenBaars, Steven P., Mishra, Umesh K.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 374 KB

english, 2011

15

Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth

Singisetti, Uttam, Wong, Man Hoi, Dasgupta, Sansaptak, Nidhi,, Swenson, Brian, Thibeault, Brian J., Speck, James S., Mishra, Umesh K.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 421 KB

english, 2011

16

III–V Multiple-Gate Field-Effect Transistors With High-Mobility $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Channel and Epi-Controlled Retrograde-Doped Fin

Chin, Hock-Chun, Gong, Xiao, Wang, Lanxiang, Lee, Hock Koon, Shi, Luping, Yeo, Yee-Chia

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 293 KB

english, 2011

17

InGaAs/InAlAs/AlAs Heterostructure Barrier Varactors on Silicon Substrate

Tavakoli Dastjerdi, M. Hadi, Sanz-Velasco, Anke, Vukusic, Josip, Kollberg, Erik L., Sadeghi, Mahdad, Stake, Jan

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 240 KB

english, 2011

18

The Effect of Dynamic Bias Stress on the Photon-Enhanced Threshold Voltage Instability of Amorphous HfInZnO Thin-Film Transistors

Son, Kyoung-Seok, Kim, Hyun-Suk, Maeng, Wan-Joo, Jung, Ji-Sim, Lee, Kwang-Hee, Kim, Tae-Sang, Park, Joon Seok, Kwon, Jang-Yeon, Koo, Bonwon, Lee, Sang-Yoon

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 342 KB

english, 2011

19

Understanding Asymmetric Transportation Behavior in Graphene Field-Effect Transistors Using Scanning Kelvin Probe Microscopy

Liu, W. J., Yu, H. Y., Xu, S. H., Zhang, Q., Zou, X., Wang, J. L., Pey, K. L., Wei, J., Zhu, H. L., Li, M. F.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 353 KB

english, 2011

20

Improved Interfacial Properties of Ge MOS Capacitor With High-k Dielectric by Using TaON/GeON Dual Interlayer

Ji, F., Xu, J. P., Lai, P. T., Li, C. X., Liu, J. G.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 277 KB

english, 2011

21

Poly-Si TFTs With Three-Dimensional Finlike Channels Fabricated Using Nanoimprint Technology

Chen, Henry J. H., Jhang, Jia-Rong, Huang, Chien-Jen, Chen, Sun-Zen, Huang, Ju-Chun

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 253 KB

english, 2011

22

$C$–$V$ Characteristics in Undoped Gate-All-Around Nanowire FET Array

Baek, Rock-Hyun, Baek, Chang-Ki, Lee, Sang-Hyun, Suk, Sung Dae, Li, Ming, Yeoh, Yun Young, Yeo, Kyoung Hwan, Kim, Dong-Won, Lee, Jeong-Soo, Kim, Dae M., Jeong, Yoon-Ha

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 339 KB

english, 2011

23

Experimental Investigation of Surface-Roughness-Limited Mobility in Uniaxial Strained pMOSFETs

Chen, William P. N., Kuo, Jack J. Y., Su, Pin

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 347 KB

english, 2011

24

Thermal Impedance Modeling of Si–Ge HBTs From Low-Frequency Small-Signal Measurements

Sahoo, Amit Kumar, Fregonese, Sébastien, Zimmer, Thomas, Malbert, Nathalie

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 361 KB

english, 2011

25

Statistical Retardation Delay of I-MOS and Its Measurement Using TDR

Cho, Hyunbo, Onal, Caner, Griffin, Peter B., Plummer, James D.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 239 KB

english, 2011

26

Low-Cost $\hbox{MoO}_{3}/\hbox{Al}$ Bilayer Electrode for Pentacene-Based OTFTs

Sarma, Ranjit, Saikia, Dipok

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 290 KB

english, 2011

27

Chronoamperometry Using Integrated Potentiostat Consisting of Poly-Si Thin-Film Transistors

Kimura, Mutsumi, Bundo, Kosuke, Imuro, Yoshiki, Sagawa, Yuki, Setsu, Koushi

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 478 KB

english, 2011

28

Correction to “Performance Enhancement of On-Chip Inductors With Permalloy Magnetic Rings” [Jan 11 69-71]

Sun, Xiao-Ling, Wang, Guo-Chang, Gao, Yu, Zhang, Xin-Zhong, Xin, Zhao-Jun, Chen, Zong-Mao

Journal:

IEEE Electron Device Letters

Year:

2011

File:

PDF, 25 KB

2011

29

Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing

Sun, Yu-Hsuan, Cheng, Yun-Wei, Wang, Szu-Chieh, Huang, Ying-Yuan, Chang, Chun-Hsiang, Yang, Sheng-Chieh, Chen, Liang-Yi, Ke, Min-Yung, Li, Chi-Kang, Wu, Yuh-Renn, Huang, JianJang

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 333 KB

english, 2011

30

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory

Park, Seong-Geon, Magyari-Kope, Blanka, Nishi, Yoshio

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 522 KB

english, 2011

31

Physics-Based Thermal Conductivity Model for Metallic Single-Walled Carbon Nanotube Interconnects

Bhattacharya, Sitangshu, Amalraj, Rex, Mahapatra, Santanu

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 231 KB

english, 2011

32

Evaluation of Direct Cu Electroplating on Ru: Feature Fill, Parametric, and Reliability

Yang, C.-C., Li, B., Seo, S.-C., Molis, S., Edelstein, D.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 336 KB

english, 2011

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