Resistive Switching by Voltage-Driven Ion Migration in...

IEEE Transactions on Electron Devices 2012 / 09 Vol. 59; Iss. 9

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

Larentis, Stefano, Nardi, Federico, Balatti, Simone, Gilmer, David C., Ielmini, Daniele
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Volume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2012.2202320
Date:
September, 2012
File:
PDF, 1.37 MB
english, 2012
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