DC and RF Performance of Gate-Last AlN/GaN MOSHEMTs on Si...

IEEE Transactions on Electron Devices 2013 / 10 Vol. 60; Iss. 10

DC and RF Performance of Gate-Last AlN/GaN MOSHEMTs on Si With Regrown Source/Drain

Huang, Tongde, Liu, Zhao Jun, Zhu, Xueliang, Ma, Jun, Lu, Xing, Lau, Kei May
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2274656
Date:
October, 2013
File:
PDF, 1.60 MB
english, 2013
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