Volume 60; Issue 10

IEEE Transactions on Electron Devices

Volume 60; Issue 10

1

High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure

Im, Ki-Sik, Won, Chul-Ho, Jo, Young-Woo, Lee, Jae-Hoon, Bawedin, Maryline, Cristoloveanu, Sorin, Lee, Jung-Hee

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.50 MB

english, 2013

2

Design of a High-Harmonic Gyrotron With a Permanent Magnet System

Xu, Shou Xi, Liu, Pu Kun, Liu, G. F., Geng, Z. H., Du, Chao Hai, Shi, S. H., Wang, H., Gu, W., Zhang, S. C.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.64 MB

english, 2013

3

GaN-Based Robust Low-Noise Amplifiers

Colangeli, Sergio, Bentini, Andrea, Ciccognani, Walter, Limiti, Ernesto, Nanni, Antonio

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.19 MB

english, 2013

4

DC and RF Performance of Gate-Last AlN/GaN MOSHEMTs on Si With Regrown Source/Drain

Huang, Tongde, Liu, Zhao Jun, Zhu, Xueliang, Ma, Jun, Lu, Xing, Lau, Kei May

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.60 MB

english, 2013

5

Doping-Less Tunnel Field Effect Transistor: Design and Investigation

Kumar, M. Jagadesh, Janardhanan, Sindhu

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 981 KB

english, 2013

6

Gate-Stack Engineering in $n$-Type Ultrascaled Si Nanowire Field-Effect Transistors

Luisier, Mathieu, Schenk, Olaf

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 394 KB

english, 2013

7

Improvement of Electrical Properties in a Novel Partially Depleted SOI MOSFET With Emphasizing on the Hysteresis Effect

Anvarifard, Mohammad K., Orouji, Ali Asghar

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.06 MB

english, 2013

8

Study of Gate Junction Temperature in GaAs pHEMTs Using Gate Metal Resistance Thermometry

Schwitter, Bryan K., Parker, Anthony E., Fattorini, Anthony P., Mahon, Simon J., Heimlich, Michael C.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.88 MB

english, 2013

9

Impact of Transistor Architecture (Bulk Planar, Trigate on Bulk, Ultrathin-Body Planar SOI) and Material (Silicon or III–V Semiconductor) on Variation for Logic and SRAM Applications

Agrawal, Nidhi, Kimura, Yoshie, Arghavani, Reza, Datta, Suman

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.97 MB

english, 2013

10

Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation

Di Lecce, Valerio, Grassi, Roberto, Gnudi, Antonio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.32 MB

english, 2013

11

AlInN-Based HEMTs for Large-Signal Operation at 40 GHz

Tirelli, Stefano, Lugani, Lorenzo, Marti, Diego, Carlin, Jean-Francois, Grandjean, Nicolas, Bolognesi, C. R.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 749 KB

english, 2013

12

Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances

Rennesson, Stephanie, Lecourt, Francois, Defrance, Nicolas, Chmielowska, Magdalena, Chenot, Sebastien, Lesecq, Marie, Hoel, Virginie, Okada, Etienne, Cordier, Yvon, De Jaeger, Jean-Claude

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 958 KB

english, 2013

13

High-Performance and Robust SRAM Cell Based on Asymmetric Dual-$k$ Spacer FinFETs

Pal, Pankaj Kumar, Kaushik, Brajesh Kumar, Dasgupta, Sudeb

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.84 MB

english, 2013

14

Design and Simulation of 5–20-kV GaN Enhancement-Mode Vertical Superjunction HEMT

Li, Zhongda, Chow, T. Paul

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 3.24 MB

english, 2013

15

High-Voltage LDMOS Transistor With Split-Gate Structure for Improved Electrical Performance

Na, Kee-Yeol, Baek, Ki-Ju, Lee, Gun-Woong, Kim, Yeong-Seuk

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.95 MB

english, 2013

16

Study on Dual Channel n-p-LDMOS Power Devices With Three Terminals

Kong, Moufu, Du, Wenfang, Chen, Xingbi

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 970 KB

english, 2013

17

Electrical Performance and Reliability Investigation of Cosputtered Cu/Ti Bonded Interconnects

Chen, Hsiao-Yu, Hsu, Sheng-Yao, Chen, Kuan-Neng

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.02 MB

english, 2013

18

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

Shinohara, Keisuke, Regan, Dean C., Tang, Yan, Corrion, Andrea L., Brown, David F., Wong, Joel C., Robinson, John F., Fung, Helen H., Schmitz, Adele, Oh, Thomas C., Kim, Samuel Jungjin, Chen, Peter S.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 8.98 MB

english, 2013

19

GaN on Si Technologies for Power Switching Devices

Ishida, Masahiro, Ueda, Tetsuzo, Tanaka, Tsuyoshi, Ueda, Daisuke

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.83 MB

english, 2013

20

High-Efficiency 7 GHz Doherty GaN MMIC Power Amplifiers for Microwave Backhaul Radio Links

Camarchia, Vittorio, Rubio, Jorge Jiulian Moreno, Pirola, Marco, Quaglia, Roberto, Colantonio, Paolo, Giannini, Franco, Giofre, Rocco, Piazzon, Luca, Emanuelsson, Thomas, Wegeland, Tobias

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 716 KB

english, 2013

21

AlGaN/GaN Three-Terminal Junction Devices for Rectification and Transistor Applications on 3C-SiC/Si Pseudosubstrates

Hiller, Lars, Pezoldt, Jorg

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 607 KB

english, 2013

22

Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs

Takashima, Shinya, Li, Zhongda, Chow, T. Paul

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.56 MB

english, 2013

23

Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics

Van Hove, Marleen, Kang, Xuanwu, Stoffels, Steve, Wellekens, Dirk, Ronchi, Nicolo, Venegas, Rafael, Geens, Karen, Decoutere, Stefaan

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.92 MB

english, 2013

24

High Voltage Vertical GaN p-n Diodes With Avalanche Capability

Kizilyalli, Isik C., Edwards, Andrew P., Nie, Hui, Disney, Don, Bour, Dave

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 528 KB

english, 2013

25

Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

Chowdhury, Srabanti, Mishra, Umesh K

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.08 MB

english, 2013

26

Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates

Hilt, Oliver, Kotara, Przemyslaw, Brunner, Frank, Knauer, Arne, Zhytnytska, Rimma, Wurfl, Joachim

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.56 MB

english, 2013

27

High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$

Freedsman, Joseph Jesudass, Kubo, Toshiharu, Egawa, Takashi

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.00 MB

english, 2013

28

InAlN Barrier Scaled Devices for Very High $f_{T}$ and for Low-Voltage RF Applications

Saunier, Paul, Schuette, Michael L., Chou, Tso-Min, Tserng, Hua-Quen, Ketterson, Andrew, Beam, Edward, Pilla, Manyam, Gao, Xiang

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 846 KB

english, 2013

29

High-Gain Millimeter-Wave AlGaN/GaN Transistors

Schwantuschke, Dirk, Bruckner, Peter, Quay, Rudiger, Mikulla, Michael, Ambacher, Oliver

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 925 KB

english, 2013

30

AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

Zanoni, Enrico, Meneghini, Matteo, Chini, Alessandro, Marcon, Denis, Meneghesso, Gaudenzio

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.08 MB

english, 2013

31

Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs

Marcon, Denis, Meneghesso, Gaudenzio, Wu, Tian-Li, Stoffels, Steve, Meneghini, Matteo, Zanoni, Enrico, Decoutere, Stefaan

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.61 MB

english, 2013

32

AlGaN/GaN HEMT Degradation: An Electro-Thermo-Mechanical Simulation

der Maur, Matthias Auf, Di Carlo, Aldo

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.08 MB

english, 2013

33

Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

Turuvekere, Sreenidhi, Karumuri, Naveen, Rahman, A. Azizur, Bhattacharya, Arnab, DasGupta, Amitava, DasGupta, Nandita

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.77 MB

english, 2013

34

Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs

Wang, Ashu, Tadjer, Marko J., Anderson, Travis J., Baranyai, Roland, Pomeroy, James W., Feygelson, Tatyana I., Hobart, Karl D., Pate, Bradford B., Calle, Fernando, Kuball, Martin

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.32 MB

english, 2013

35

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

Bisi, Davide, Meneghini, Matteo, de Santi, Carlo, Chini, Alessandro, Dammann, Michael, Bruckner, Peter, Mikulla, Michael, Meneghesso, Gaudenzio, Zanoni, Enrico

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.31 MB

english, 2013

36

Deep Levels Characterization in GaN HEMTs—Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy

Chini, Alessandro, Soci, Fabio, Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.26 MB

english, 2013

37

Evaluation of Electron Trapping Speed of AlGaN/GaN HEMT With Real-Time Electroluminescence and Pulsed $I{-}V$ Measurements

Wakejima, Akio, Wilson, Amalraj Frank, Mase, Suguru, Joka, Takuya, Egawa, Takashi

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.78 MB

english, 2013

38

Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook

Bellotti, Enrico, Bertazzi, Francesco, Shishehchi, Sara, Matsubara, Masahiko, Goano, Michele

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.34 MB

english, 2013

39

Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

Khandelwal, Sourabh, Yadav, Chandan, Agnihotri, Shantanu, Chauhan, Yogesh Singh, Curutchet, Arnaud, Zimmer, Thomas, De Jaeger, Jean-Claude, Defrance, Nicolas, Fjeldly, Tor A.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 910 KB

english, 2013

40

Electric Field Distribution Around Drain-Side Gate Edge in AlGaN/GaN HEMTs: Analytical Approach

Si, Jia, Wei, Jin, Chen, Wanjun, Zhang, Bo

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.05 MB

english, 2013

41

Capacitor-Less Gate Drive Circuit Capable of High-Efficiency Operation for Non-Insulating-Gate GaN FETs

Hattori, Fumiya, Umegami, Hirokatsu, Yamamoto, Masayoshi

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 3.54 MB

english, 2013

42

Charge Loss Mechanisms of Nitride-Based Charge Trap Flash Memory Devices

Lee, Meng Chuan, Wong, Hin Yong

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.34 MB

english, 2013

43

Thulium Silicate Interfacial Layer for Scalable High-k/Metal Gate Stacks

Dentoni Litta, Eugenio, Hellstrom, Per-Erik, Henkel, Christoph, Ostling, Mikael

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.69 MB

english, 2013

44

Piezoelectric Strain Modulation in FETs

van Hemert, Tom, Hueting, Raymond J. E.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.26 MB

english, 2013

45

Interactions Between Line Edge Roughness and Random Dopant Fluctuation in Nonplanar Field-Effect Transistor Variability

Leung, Greg, Chui, Chi On

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.58 MB

english, 2013

46

On the Origin of Kink Effect in Current–Voltage Characteristics of AlGaN/GaN High Electron Mobility Transistors

Kaushik, Janesh K., Balakrishnan, V. Raman, Panwar, Brishbhan Singh, Muralidharan, Rangarajan

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.24 MB

english, 2013

47

Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure

Matioli, Elison, Lu, Bin, Palacios, Tomas

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.05 MB

english, 2013

48

Theoretical Investigation of Trigate AlGaN/GaN HEMTs

Alsharef, Mohamed A., Granzner, Ralf, Schwierz, Frank

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 744 KB

english, 2013

49

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Ohi, Kota, Asubar, Joel Tacla, Nishiguchi, Kenya, Hashizume, Tamotsu

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.59 MB

english, 2013

50

p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

Hahn, Herwig, Reuters, Benjamin, Pooth, Alexander, Hollander, Bernd, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.90 MB

english, 2013

51

Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET

Hu, Vita Pi-Ho, Fan, Ming-Long, Su, Pin, Chuang, Ching-Te

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.24 MB

english, 2013

52

Fabrication and Characterization of Enhancement-Mode High-$\kappa~{\rm LaLuO}_{3}$-AlGaN/GaN MIS-HEMTs

Yang, Shu, Huang, Sen, Schnee, Michael, Zhao, Qing-Tai, Schubert, Jrgen, Chen, Kevin J.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.92 MB

english, 2013

53

Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

Johnson, Derek W., Lee, Rinus T. P., Hill, Richard J. W., Wong, Man Hoi, Bersuker, Gennadi, Piner, Edwin L., Kirsch, Paul D., Harris, H. Rusty

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.32 MB

english, 2013

54

Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors

Jin, Donghyun, del Alamo, Jesus A.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.90 MB

english, 2013

55

High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology

Kim, SangHyeon, Yokoyama, Masafumi, Nakane, Ryosho, Ichikawa, Osamu, Osada, Takenori, Hata, Masahiko, Takenaka, Mitsuru, Takagi, Shinichi

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.32 MB

english, 2013

56

Three-Side Buttable Integrated Ultrasound Chip With a 16$\,\times\,$16 Reconfigurable Transceiver and Capacitive Micromachined Ultrasonic Transducer Array for 3-D Ultrasound Imaging Systems

Jung, Sung-Jin, Song, Jong-Keun, Kwon, Oh-Kyong

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 4.11 MB

english, 2013

57

A Gain-Adaptive Column Amplifier for Wide-Dynamic-Range CMOS Image Sensors

Le-Thai, Ha, Xhakoni, Adi, Gielen, Georges

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 493 KB

english, 2013

58

Solution of Time Dependent Joule Heat Equation for a Graphene Sheet Under Thomson Effect

Verma, Rekha, Bhattacharya, Sitangshu, Mahapatra, Santanu

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.81 MB

english, 2013

59

Analytical Current and Capacitance Models for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors

Bae, Minkyung, Lee, Kyung Min, Cho, Eou-Sik, Kwon, Hyuck-In, Kim, Dong Myong, Kim, Dae Hwan

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.36 MB

english, 2013

60

Dynamic Modeling of Dual Speed Ferroelectric and Charge Hybrid Memory

Rajwade, Shantanu Rajaram, Auluck, Kshitij, Naoi, Taro A., Jayant, Krishna, Kan, Edwin Chihchuan

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 953 KB

english, 2013

61

Annealing Effects of Ti/Au Contact on n-MgZnO/p-Si Ultraviolet-B Photodetectors

Hou, Yaonan, Mei, Zengxia, Liang, Huili, Ye, Daqian, Gu, Changzhi, Du, Xiaolong, Lu, Yicheng

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 606 KB

english, 2013

62

SPAD Image Sensor With Analog Counting Pixel for Time-Resolved Fluorescence Detection

Pancheri, Lucio, Massari, Nicola, Stoppa, David

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.07 MB

english, 2013

63

Gigahertz Operation of a-IGZO Schottky Diodes

Chasin, Adrian, Nag, Manoj, Bhoolokam, Ajay, Myny, Kris, Steudel, Soeren, Schols, Sarah, Genoe, Jan, Gielen, Georges, Heremans, Paul

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.47 MB

english, 2013

64

Surface Potential-Based Polycrystalline-Silicon Thin-Film Transistors Compact Model by Nonequilibrium Approach

Ikeda, Hiroyuki, Sano, Nobuyuki

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.63 MB

english, 2013

65

A 252-${\rm V/lux}{\cdot}{\rm s}$, 16.7-Million-Frames-Per-Second 312-kpixel Back-Side-Illuminated Ultrahigh-Speed Charge-Coupled Device

Arai, Toshiki, Yonai, Jun, Hayashida, Tetsuya, Ohtake, Hiroshi, van Kuijk, Harry, Etoh, Takeharu Goji

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.77 MB

english, 2013

66

Flexible High-$\kappa$/Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) Fabric

Rojas, Jhonathan Prieto, Ghoneim, Mohamed Tarek, Young, Chadwin D., Hussain, Muhammad Mustafa

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 484 KB

english, 2013

67

Sputtered ZnO Thin-Film Transistors With Carrier Mobility Over 50 ${\rm cm}^{2}/{\rm Vs}$

Brox-Nilsen, Christian, Jin, Jidong, Luo, Yi, Bao, Peng, Song, Aimin M.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 807 KB

english, 2013

68

Characterization and Modeling of the Band-to-Band Current Variability of Nanoscale Device Junctions

Ghetti, Andrea, Compagnoni, Christian Monzio, Calloni, Andrea, Vendrame, Loris, Spinelli, Alessandro S., Lacaita, Andrea L.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.26 MB

english, 2013

69

More Accurate and Reliable Extraction of Tunneling Resistance in Tunneling FET and Verification in Small-Signal Circuit Operation

Cho, Seongjae, Kang, In Man, Kim, Kyung Rok

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.39 MB

english, 2013

70

Heat Channeling in Extremely Thin Silicon-on-Insulator Devices: A Simulation Study

Orfanidou, Charis Mina, Giapintzakis, John

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 805 KB

english, 2013

71

Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type Switching

Kamiya, Katsumasa, Yang, Moon Young, Magyari-Kope, Blanka, Niwa, Masaaki, Nishi, Yoshio, Shiraishi, Kenji

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.82 MB

english, 2013

72

High-Performance Double-Layer Nickel Nanocrystal Memory by Ion Bombardment Technique

Liu, Sheng-Hsien, Yang, Wen-Luh, Lin, Yu-Hsien, Wu, Chi-Chang, Chao, Tien-Sheng

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.50 MB

english, 2013

73

Photo-Induced Coplanar Waveguide RF Switch and Optical Crosstalk on High-Resistivity Silicon Trap-Rich Passivated Substrate

Ali, Khaled Ben, Neve, Cesar Roda, Gharsallah, Ali, Raskin, Jean-Pierre

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.10 MB

english, 2013

74

First Principles Simulations of Nanoscale Silicon Devices With Uniaxial Strain

Zhang, Lining, Zahid, Ferdows, Zhu, Yu, Liu, Lei, Wang, Jian, Guo, Hong, Chan, Philip Ching Ho, Chan, Mansun

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 697 KB

english, 2013

75

Closed-Form and Explicit Analytical Model for Crosstalk in CMOS Photodiodes

Blanco-Filgueira, Beatriz, Lopez, Paula, Roldan, Juan Bautista

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 522 KB

english, 2013

76

Monte Carlo Simulation of Hot Carrier Transport in Heterogeneous Ge/${\rm Al}_{x}{\rm Ga}_{1-x}{\rm As}~(0\leq x\leq 0.8)$ Multilayer Avalanche Photodiodes

Chia, Ching Kean, Dalapati, Goutam Kumar

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.43 MB

english, 2013

77

Improved ON-State Reliability of Atom Switch Using Alloy Electrodes

Tada, Munehiro, Sakamoto, Toshitsugu, Banno, Naoki, Okamoto, Koichiro, Iguchi, Noriyuki, Hada, Hiromitsu, Miyamura, Makoto

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 6.73 MB

english, 2013

78

Exoemission Properties of PDP Protective Layers

Chen, Yuxiang, Li, Qing, Kuang, Wenjian, Hu, Kai, Tolner, Harm

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.28 MB

english, 2013

79

Guest Editorial Special Issue on GaN Electronic Devices

Ghione, Giovanni, Chen, Kevin J., Egawa, Takashi, Meneghesso, Gaudenzio, Palacios, Tomas, Quay, Ruediger

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.99 MB

english, 2013

80

Determination of Diffusion Length for the Finite Thickness Normal-Collector Configuration Using EBIC Technique

Tan, Chee Chin, Ong, Vincent K. S., Radhakrishnan, K., Sunar, Siti Hairunnisah Bte

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.41 MB

english, 2013

81

AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High Temperature

Lee, Jae-Hoon, Park, Chanho, Im, Ki-Sik, Lee, Jung-Hee

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.57 MB

english, 2013

82

Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors

Xifeng, Li, Enlong, Xin, Jianhua, Zhang

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 855 KB

english, 2013

83

A Statistical Evaluation of Random Telegraph Noise of In-Pixel Source Follower Equivalent Surface and Buried Channel Transistors

Kuroda, Rihito, Yonezawa, Akihiro, Teramoto, Akinobu, Li, Tsung-Ling, Tochigi, Yasuhisa, Sugawa, Shigetoshi

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.66 MB

english, 2013

84

Impact Ionization in Absorption, Grading, Charge, and Multiplication Layers of InP/InGaAs SAGCM APDs With a Thick Charge Layer

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.04 MB

english, 2013

85

Theory, Simulations, and Experiments of the Dispersion and Interaction Impedance for the Double-Slot Coupled-Cavity Slow Wave Structure in TWT

He, Fangming, Luo, Jirun, Zhu, Min, Guo, Wei

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 565 KB

english, 2013

86

The Impact of n-p-n Selector-Based Bipolar RRAM Cross-Point on Array Performance

Mandapati, Raju, Borkar, Abhijit Shripat, Srinivasan, V. S. Senthil, Bafna, Pranil, Karkare, Prateek, Lodha, Saurabh, Ganguly, Udayan

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.01 MB

english, 2013

87

Power-Rail ESD Clamp Circuit With Diode-String ESD Detection to Overcome the Gate Leakage Current in a 40-nm CMOS Process

Altolaguirre, Federico Agustin, Ker, Ming-Dou

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 3.23 MB

english, 2013

88

Low Cell Gap Polymeric Liquid Crystal Lens for 2-D/3-D Switchable Auto-Stereoscopic Display

Mun, Byung-June, Baek, Ji-Ho, Lee, Joun Ho, Kim, Byeong Koo, Choi, Hyun Chul, Kim, Jae-Hoon, Lee, Gi-Dong

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.21 MB

english, 2013

89

Corrections to “Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors” [Jul 13 2128-2134]

Verreck, Devin, Verhulst, Anne S., Kao, Kuo-Hsing, Vandenberghe, William G., De Meyer, Kristin, Groeseneken, Guido

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 153 KB

english, 2013

90

40th IEEE Photovoltaic Specialists Conference

Journal:

IEEE Transactions on Electron Devices

Year:

2013

File:

PDF, 1.06 MB

2013

91

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 153 KB

english, 2013

92

2014 IEEE International Reliablity Physics Symposium

Journal:

IEEE Transactions on Electron Devices

Year:

2013

File:

PDF, 1.39 MB

2013

93

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 107 KB

english, 2013

94

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 184 KB

english, 2013

95

A Warm Welcome to a New TED Editor

Cressler, John D.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 136 KB

english, 2013

96

26th International Symposium on Power semiconductor Devices and ICs

Journal:

IEEE Transactions on Electron Devices

Year:

2013

File:

PDF, 1.53 MB

2013

97

[Front cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2013

File:

PDF, 259 KB

2013

98

[Blank page - back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2013

File:

PDF, 5 KB

2013

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