A New LDMOSFET with Tunneling Junction for Improved...

IEEE Electron Device Letters 2013 / 01 Vol. 34; Iss. 1

A New LDMOSFET with Tunneling Junction for Improved On-State Performance

Goyal, Nitin, Saxena, Raghvendra Sahai
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2012.2225403
Date:
January, 2013
File:
PDF, 244 KB
english, 2013
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