Reducing Stacking Faults in Highly Doped N-Type 4H-SiC...

Materials Science Forum 2011 / 3 Vol. 679-680

Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal

Kojima, Kazutoshi, Kato, Tomohisa, Ito, Sachiko, Kojima, Jun, Hirose, Fusao, Kito, Yasuo, Yamauchi, Shoichi, Nishikawa, K., Adachi, Ayumu
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Volume:
679-680
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.679-680.8
Date:
March, 2011
File:
PDF, 875 KB
english, 2011
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