Volume 679-680

Materials Science Forum

Volume 679-680

1

Defects in SiC: Theory

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.70 MB

english, 2011

2

A Comparative Study of the Morphologies of Etch Pits in Semi-Insulating Silicon Carbide Single Crystals

Peng, Yan, Xua, Xian Gang, Hu, Xiao Bo, Chen, Xiu Fang, Gao, Yu Qiang

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 2.72 MB

english, 2011

3

1200V SiC JFET in Cascode Light Configuration: Comparison versus Si and SiC Based Switches

Björk, Fanny, Treu, Michael, Hilsenbeck, Jochen, Kutschak, M.A., Domes, Daniel, Rupp, Roland

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.19 MB

english, 2011

4

Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO2/SiC Interface on F-N Current Degradation

Strenger, Christian, Bauer, Anton J., Ryssel, Heiner

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 458 KB

english, 2011

5

Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates

Jokubavicius, Valdas, Liljedahl, Rickard, Ou, Yi Yu, Ou, Hai Yan, Kamiyama, Satoshi, Yakimova, Rositza, Syväjärvi, Mikael

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 839 KB

english, 2011

6

Enlargement Growth of Large 4H-SiC Bulk Single Crystal

Kato, Tomohisa, Miura, Tomonori, Nagai, Ichiro, Taniguchi, Hiroyoshi, Kawashima, Hideaki, Ozawa, Tetsuya, Arai, Kazuo, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 2.79 MB

english, 2011

7

Polytype Stability of 4H-SiC Seed Crystal on Solution Growth

Alexander,, Seki, Kazuaki, Kozawa, Shigeta, Yamamoto, Yuji, Ujihara, Toru, Takeda, Yoshikazu

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 2.72 MB

english, 2011

8

Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal

Kojima, Kazutoshi, Kato, Tomohisa, Ito, Sachiko, Kojima, Jun, Hirose, Fusao, Kito, Yasuo, Yamauchi, Shoichi, Nishikawa, K., Adachi, Ayumu

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 875 KB

english, 2011

9

The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method

Yeo, Im Gyu, Lee, Tae Woo, Park, Jong Hwi, Yang, Woo Sung, Ryu, Heui Bum, Park, Mi Seon, Kim, Il Soo, Shin, Byoung Chul, Lee, Won Jae, Eun, Tai Hee, Lee, Seung Seok, Chun, Myong Chuel

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 407 KB

english, 2011

10

Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method

Yeo, Im Gyu, Lee, Tae Woo, Park, Jong Hwi, Yang, Woo Sung, Ryu, Heui Bum, Park, Mi Seon, Kim, Il Soo, Shin, Byoung Chul, Lee, Won Jae, Eun, Tai Hee, Lee, Seung Seok, Chun, Myong Chuel

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 353 KB

english, 2011

11

Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

Leone, Stefano, Lin, Yuan Chih, Beyer, Franziska Christine, Andersson, Sven, Pedersen, Henrik, Kordina, Olle, Henry, Anne, Janzén, Erik

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 371 KB

english, 2011

12

High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC

Hassan, Jawad, Bergman, J. Peder, Henry, Anne, Janzén, Erik

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 4.37 MB

english, 2011

13

4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions

Kallinger, Birgit, Thomas, Bernd, Berwian, Patrick, Friedrich, Jochen, Trachta, Gerd, Weber, Arnd Dietrich

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 437 KB

english, 2011

14

Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers

Wheeler, Virginia D., VanMil, Brenda L., Myers-Ward, Rachael L., Chung, S., Picard, Yoosuf N., Skowronski, Marek, Stahlbush, Robert E., Mahadik, Nadeemullah A., Eddy Jr., Charles R., Gaskill, D. Kurt

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 3.40 MB

english, 2011

15

Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC

Hassan, Jawad, Ščajev, Patrik, Jarašiūnas, Kestutis, Bergman, J. Peder

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 288 KB

english, 2011

16

Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas

Myers-Ward, Rachael L., Nyakiti, Luke O., Hite, Jennifer K., Glembocki, Orest J., Bezares, Francisco J., Caldwell, Joshua D., Imhoff, Eugene A., Hobart, Karl D., Culbertson, James C., Picard, Yoosuf N

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.62 MB

english, 2011

17

4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer

Chung, Gil Yong, Loboda, Mark J., Zhang, J., Wan, Jian Wei, Carlson, E.P., Toth, T.J., Stahlbush, Robert E., Skowronski, Marek, Berechman, R., Sundaresan, Siddarth G., Singh, Ranbir

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 999 KB

english, 2011

18

Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique

Zoulis, Georgios, Sun, Jian Wu, Galben-Sandulache, Irina G., Sun, Guoli L., Juillaguet, Sandrine, Ouisse, Thierry, Chaussende, Didier, Madar, Roland, Camassel, Jean

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 297 KB

english, 2011

19

Propagation of Stacking Faults in 3C-SiC

Nagasawa, Hiroyuki, Kawahara, Takamitsu, Yagi, Kuniaki, Hatta, Naoki

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 734 KB

english, 2011

20

On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide

Camarda, Massimo, Severino, Andrea, Fiorenza, Patrick, Raineri, Vito, Scalese, S., Bongiorno, Corrado, La Magna, Antonino, La Via, Francesco, Mauceri, Marco, Crippa, Danilo

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 2.07 MB

english, 2011

21

Forced-Air-Cooled 10 kW Three-Phase SiC Inverter with Output Power Density of More than 20 kW/L

Sato, Shinji, Matsui, Kohei, Zushi, Yusuke, Murakami, Yoshinori, Tanimoto, Satoshi, Sato, Hiroshi, Yamaguchi, Hiroshi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 492 KB

english, 2011

22

Fault Protection System for Current Source Inverter with Normally on SiC JFETs

Rabkowski, Jacek, Zdanowski, Mariusz, Nowak, Mietek, Barlik, Roman

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 342 KB

english, 2011

23

Energy Band Structure of SiO2/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer

Watanabe, Heiji, Kirino, Takashi, Kagei, Yusuke, Harries, James, Yoshigoe, Akitaka, Teraoka, Yuden, Mitani, Shuhei, Nakano, Yuki, Nakamura, Takashi, Hosoi, Takuji, Shimura, Takayoshi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 421 KB

english, 2011

24

Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional

Hornos, Tamas, Gali, Adam, Svensson, Bengt G.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 263 KB

english, 2011

25

Thermal Management versus Full Isolation: Trade Off in Packaging Technologies of Modern SiC Diodes

Gerlach, Rolf, Rupp, Roland, Türkes, Peter, Otremba, Ralf

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 303 KB

english, 2011

26

Atomistic Simulation of SiC Growth at the SiC(0001)/Si1-XCx Interface by the Monte Carlo Method

Itoh, Makoto, Uda, Tsuyoshi, Nara, J., Ohno, Takahisa

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 616 KB

english, 2011

27

300ºC Silicon Carbide Integrated Circuits

Stum, Zachary, Tilak, Vinayak, Losee, Peter A., Andarawis, E., Chen, C.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 758 KB

english, 2011

28

3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide

Kobayashi, Motoki, Uchida, Hidetsugu, Minami, Akiyuki, Sakata, Toyokazu, Esteve, Romain, Schöner, Adolf

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.78 MB

english, 2011

29

Investigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC Epilayers

Kamata, Isaho, Zhang, Xuan, Tsuchida, Hidekazu

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 327 KB

english, 2011

30

InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate

Han, Ji Sheng, Dimitrjiev, Sima, Wang, Li, Iacopi, Alan, Qu, Shuang, Xu, Xian Gang

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 3.91 MB

english, 2011

31

The Formation of an Epitaxial-Graphene Cap Layer for Post-Implantation High Temperature Annealing of SiC and its In Situ Removal by Si-Vapor Etching

Ushio, Shoji, Adachi, Ayumu, Matsuda, Kazuhiro, Ohtani, Noboru, Kaneko, Tadaaki

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 492 KB

english, 2011

32

Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application

Anzalone, Ruggero, Camarda, Massimo, D'Arrigo, Giuseppe, Locke, Christopher, Canino, Andrea, Piluso, Nicolò, Severino, Andrea, La Magna, Antonino, Saddow, Stephen E., La Via, Francesco

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 796 KB

english, 2011

33

Surface Treatments of 4H-SiC Evaluated by Contact Angle Measurement

Hatayama, Tomoaki, Suzuki, Hiroyuki, Koketsu, Hidenori, Yano, Hiroshi, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 401 KB

english, 2011

34

Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique

Galben-Sandulache, Irina G., Marinova, Maya, Mantzari, Alkyoni, Sun, Guoli L., Andreadou, Ariadne, Chaussende, Didier, Polychroniadis, Efstathios K.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 630 KB

english, 2011

35

Raman Stress Characterization of Hetero-Epitaxial 3C-SiC Free Standing Structures

Piluso, Nicolò, Camarda, Massimo, Anzalone, Ruggero, Severino, Andrea, La Magna, Antonino, D'Arrigo, Giuseppe, La Via, Francesco

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.04 MB

english, 2011

36

Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor

Umeda, T., Esaki, K., Kosugi, Ryouji, Fukuda, Kenji, Morishita, Norio, Ohshima, Takeshi, Isoya, Junichi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 349 KB

english, 2011

37

Design and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETs

Veliadis, Victor, Stewart, Eric J., Hearne, Harold, McNutt, Ty, Chang, W., Snook, Megan, Lelis, Aivars J., Scozzie, Charles

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 631 KB

english, 2011

38

Characterisation of HfO2/Si/SiC MOS Capacitors

Gammon, Peter M., Pérez-Tomás, Amador, Jennings, Michael R., Guy, Owen J., Rimmer, N., Llobet, J., Mestres, Narcis, Godignon, Phillippe, Placidi, Marcel, Zabala, M., Covington, James A., Mawby, Philip

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 902 KB

english, 2011

39

Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs

Naik, Harsh, Chow, T. Paul

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 600 KB

english, 2011

40

Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime

Levinshtein, Michael E., Ivanov, Pavel A., Palmour, John, Agarwal, Anant, Das, Mrinal K.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 271 KB

english, 2011

41

Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas

Lorenzzi, Jean, Jegenyes, Nikoletta, Lazar, Mihaï, Tournier, Dominique, Cauwet, François, Carole, Davy, Ferro, Gabriel

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.14 MB

english, 2011

42

SiC Zener Diode for Gate Protection of 4.5 kV SiCGT

Nakayama, Koji, Ishii, Ryosuke, Asano, Katsunori, Miyazawa, Tetsuya, Tsuchida, Hidekazu

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 400 KB

english, 2011

43

Nanobaguettes Single Epitaxial Graphene Layers on SiC(11-20)

Caboni, Alessandra, Camara, Nicolas, Pausas, Esther, Mestres, Narcis, Godignon, Phillippe

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 2.49 MB

english, 2011

44

Single-Crystal Silicon Carbide: A Biocompatible and Hemocompatible Semiconductor for Advanced Biomedical Applications

Saddow, Stephen E., Frewin, Christopher L., Coletti, Camilla, Schettini, N., Weeber, E., Oliveros, A., Jarosezski, M.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.15 MB

english, 2011

45

Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics

Steeds, John W.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 934 KB

english, 2011

46

Pulse Current Characterization of SiC GTO Thyristors

Scharnholz, Sigo, Vergne, Bertrand, Konrath, Jens Peter, Pâques, Gontran, Zorngiebel, Volker

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.68 MB

english, 2011

47

Schottky Contacts to N-Type 4H-SiC Fabricated with Ti-, Mo-, Ni- and Al-Based Metallizations

Perrone, Denis, Ferrero, Sergio, Scaltrito, Luciano, Naretto, Marco, Celasco, Edvige, Pirri, C. Fabrizio

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 411 KB

english, 2011

48

High-Temperature Reliability of SiC Power MOSFETs

Lelis, Aivars J., Green, Ronald, Habersat, Daniel B.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 342 KB

english, 2011

49

Effect of Low Frequency Magnetic Field on SiC Solution Growth

Mercier, Frédéric, Nishizawa, Shinichi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.16 MB

english, 2011

50

High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension

Ghandi, Reza, Buono, Benedetto, Domeij, Martin, Zetterling, Carl Mikael, Östling, Mikael

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 382 KB

english, 2011

51

Improved Observation of SiC/SiO2 Oxide Charge Traps Using MOS C-V

Habersat, Daniel B., Lelis, Aivars J.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 623 KB

english, 2011

52

Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State

Lazar, Mihaï, Enoch, Fabrice, Laariedh, Farah, Planson, Dominique, Brosselard, Pierre

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.53 MB

english, 2011

53

New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching

Katsuno, T., Watanabe, Y., Fujiwara, Hirokazu, Konishi, Masaki, Yamamoto, Takeo, Endo, Takeshi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 955 KB

english, 2011

54

Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates

Henry, Anne, Leone, Stefano, Beyer, Franziska Christine, Andersson, Sven, Kordina, Olle, Janzén, Erik

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 580 KB

english, 2011

55

2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al+ Ions

Lulli, Giorgio, Nipoti, Roberta

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 737 KB

english, 2011

56

Lifetime Control of 4.5 kV SiCGT by High-Energy Electron Irradiation

Asano, Katsunori, Nakayama, Koji, Miyanagi, Yoichi, Tanaka, Atsushi, Nishimura, Masahiko, Izumi, Toru, Ogata, Shuuji, Hayashi, Toshihiko

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 436 KB

english, 2011

57

Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC

Schmitt, H., Häublein, Volker, Bauer, Anton J., Frey, Lothar

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 304 KB

english, 2011

58

Formation of Periodic Steps on 6H-SiC (0001) Surface by Annealing in a High Vacuum

Lebedev, Sergey P., Petrov, V.N., Kotousova, I.S., Lavrent’ev, A.A., Dement’ev, P.A., Lebedev, Alexander A., Titkov, Alexander N.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 484 KB

english, 2011

59

Control of Inclined Sidewall Angles of 4H-SiC Mesa and Trench Structures

Koketsu, Hidenori, Hatayama, Tomoaki, Amishima, Kento, Yano, Hiroshi, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.57 MB

english, 2011

60

Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC

Nipoti, Roberta, Mancarella, Fulvio, Moscatelli, Francesco, Rizzoli, R., Zampolli, S.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 330 KB

english, 2011

61

Extraordinary Characteristics of 4H-SiC Trench MOSFETs on Large Off-Axis Substrates

Ueoka, Yoshihiro, Yano, Hiroshi, Okamoto, Dai, Hatayama, Tomoaki, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 341 KB

english, 2011

62

Instability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants

Yano, Hiroshi, Oshiro, Yuki, Okamoto, Dai, Hatayama, Tomoaki, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 328 KB

english, 2011

63

Microscopic Examination of SiO2/4H-SiC Interfaces

Hatakeyama, Tetsuo, Matsuhata, Hirofumi, Suzuki, T., Shinohe, Takashi, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 4.01 MB

english, 2011

64

Observations on C-Face SiC Graphene Growth in Argon

Gaskill, D. Kurt, Hite, Jennifer K., Culbertson, James C., Jernigan, Glenn G., Tedesco, Joseph L., Nyakiti, Luke O., Wheeler, Virginia D., Myers-Ward, Rachael L., Garces, N.Y., Eddy Jr., Charles R.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 2.31 MB

english, 2011

65

600V-30A 4H-SiC JBS and Si IGBT Hybrid Module

Li, Yu Zhu, Ni, Wei Jiang, Li, Zhe Yang, Li, Yun, Chen, Chen, Chen, Xiao Jian

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 400 KB

english, 2011

66

Proton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes

Gaskill, D. Kurt, Hu, Jun, Xin, X., Zhao, Jian H., VanMil, Brenda L., Myers-Ward, Rachael L., Eddy Jr., Charles R.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.34 MB

english, 2011

67

Influence of Intercalated Silicon on the Transport Properties of Graphene

Goss, Jonathan P., Briddon, Patrick R., Nagareddy, Venkata K., Wright, Nicolas G., Horsfall, Alton B., Caldwell, Joshua D., Gaskill, D. Kurt, Jernigan, Glenn G.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 3.51 MB

english, 2011

68

Improved MOS Interface Properties of C-Face 4H-SiC by POCl3 Annealing

Kotake, Shinya, Yano, Hiroshi, Okamoto, Dai, Hatayama, Tomoaki, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 434 KB

english, 2011

69

Reduction of Charge Trapping Sites in Al2O3/SiO2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices

Hosoi, Takuji, Kagei, Yusuke, Kirino, Takashi, Mitani, Shuhei, Nakano, Yuki, Nakamura, Takashi, Shimura, Takayoshi, Watanabe, Heiji

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 418 KB

english, 2011

70

Optimization of SiC MESFET for High Power and High Frequency Applications

Ejebjörk, Niclas, Zirath, Herbert, Bergman, J. Peder, Magnusson, Björn, Rorsman, Niklas

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 789 KB

english, 2011

71

Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height

Pâques, Gontran, Scharnholz, Sigo, Konrath, Jens Peter, Dheilly, Nicolas, Planson, Dominique, De Doncker, Rik W.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 225 KB

english, 2011

72

4H-SiC N-MOSFET Logic Circuits for High Temperature Operation

Le-Huu, Martin, Grieb, Michael, Schrey, Frederik F., Schmitt, H., Häublein, Volker, Bauer, Anton J., Ryssel, Heiner, Frey, Lothar

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 983 KB

english, 2011

73

Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers

Miyazawa, Tetsuya, Ito, Masahiko, Tsuchida, Hidekazu

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 747 KB

english, 2011

74

Evolution of Extended Defects during Epitaxial Growths: A Monte Carlo Study

Camarda, Massimo, La Magna, Antonino, La Via, Francesco

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 861 KB

english, 2011

75

A Molded Package Optimized for High Voltage SiC-Devices

Dohnke, Karl Otto, Bartsch, Wolfgang, Schörner, Reinhold, Van Weelden, T.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.40 MB

english, 2011

76

Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and CTLM Measurements

Song, Xi, Bazin, Anne Elisabeth, Michaud, Jean Francois, Cayrel, Frédéric, Zielinski, Marcin, Portail, Marc, Chassagne, Thierry, Collard, Emmanuel, Alquier, Daniel

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 323 KB

english, 2011

77

Analytical Model of Stress Relaxation in 3C SiC Layers on Silicon

Zielinski, Marcin, Michaud, Jean Francois, Jiao, S., Chassagne, Thierry, Bazin, Anne Elisabeth, Michon, A., Portail, Marc, Alquier, Daniel

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 306 KB

english, 2011

78

Time-Dependent Density Functional Calculations on Hydrogenated Silicon Carbide Nanocrystals

Vörös, Marton, Deák, Peter, Frauenheim, Thomas, Gali, Adam

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.54 MB

english, 2011

79

Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer

Senzaki, Junji, Shimozato, Atsushi, Koshikawa, Kazushige, Tanaka, Yasunori, Fukuda, Kenji, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 771 KB

english, 2011

80

Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density

Fujiwara, Hirokazu, Konishi, Masaki, Ohnishi, T., Nakamura, T., Hamada, Kimimori, Katsuno, T., Watanabe, Y., Endo, Takeshi, Yamamoto, Takeo, Tsuruta, K., Onda, Shoichi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.32 MB

english, 2011

81

Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation

Miyake, Hiroki, Kimoto, Tsunenobu, Suda, Jun

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 303 KB

english, 2011

82

Improvement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiC

Kimura, Masaya, Kato, Masashi, Ichimura, Masaya

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 805 KB

english, 2011

83

Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs

Naik, Harsh, Chow, T. Paul

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 315 KB

english, 2011

84

Enhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal Oxidation

Løvlie, Lars S., Svensson, Bengt G.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 359 KB

english, 2011

85

Performance Tests of a 4,1x4,1mm2 SiC LCVJFET for a DC/DC Boost Converter Application

Tolstoy, Georg, Peftitsis, Dimosthenis, Rabkowski, Jacek, Nee, Hans Peter

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 375 KB

english, 2011

86

High Temperature Silicon Carbide CMOS Integrated Circuits

Clark, David T., Ramsay, Ewan P., Murphy, A.E., Smith, D.A., Thompson, Robin. F., Young, R.A.R., Cormack, J.D., Zhu, C., Finney, S., Fletcher, John

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 336 KB

english, 2011

87

Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers

Feng, Gan, Suda, Jun, Kimoto, Tsunenobu

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 740 KB

english, 2011

88

Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor

Ivanov, I.G., Henry, Anne, Yan, Fei, Choyke, Wolfgang J., Janzén, Erik

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 928 KB

english, 2011

89

Schottky Barrier 3C-SiC Nanowire Field Effect Transistor

Rogdakis, Konstantinos, Bano, Edwige, Montes, Laurent, Bechelany, Mikhael, Cornu, David, Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 610 KB

english, 2011

90

Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors

Stevens, Rupert C., Vasilevskiy, Konstantin, Lees, John E., Wright, Nicolas G., Horsfall, Alton B.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 328 KB

english, 2011

91

DLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N Junctions

Ivanov, Pavel A., Korolkov, Oleg, Samsonova, Tat'yana P., Sleptsuk, Natalja, Potapov, Alexander S., Toompuu, Jana, Rang, Toomas

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 789 KB

english, 2011

92

Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications

Banu, Viorel, Godignon, Phillippe, Jordá, Xavier, Alexandru, Mihaela, Millán, José

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 521 KB

english, 2011

93

Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport

Berckmans, Stéphane, Auvray, Laurent, Ferro, Gabriel, Cauwet, François, Carole, Davy, Soulière, Veronique, Viala, Jean Claude, Collard, Emmanuel, Quoirin, Jean Baptiste, Brylinski, Christian

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 433 KB

english, 2011

94

Advances in Silicon Carbide Single Photon Detectors

Vert, Alexey V., Soloviev, Stanislav I., Sandvik, Peter M.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 660 KB

english, 2011

95

Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2]

Lee, Tae Woo, Yeo, Im Gyu, Shin, Byoung Chul, Lee, Won Jae, Park, Mi Seon, Hwang, Hyun Hee, Nishino, Shigehiro

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 410 KB

english, 2011

96

Measurements and Simulations of Lateral PNP Transistors in a SiC NPN BJT Technology for High Temperature Integrated Circuits

Lanni, Luigia, Ghandi, Reza, Domej, Martin, Zetterling, Carl Mikael, Malm, Gunnar, Östling, Mikael

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.01 MB

english, 2011

97

Study of the Interface Properties of TiO2/SiO2/SiC by Photocapacitance

Weng, Ming Hung, Barker, Simon, Mahapatra, Rajat, Furnival, Benjamin J.D., Wright, Nicolas G., Horsfall, Alton B.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 311 KB

english, 2011

98

Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature

Kato, Muneharu, Nanen, Yuichiro, Suda, Jun, Kimoto, Tsunenobu

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 406 KB

english, 2011

99

Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode

Nakayama, Koji, Ishii, Ryosuke, Asano, Katsunori, Miyazawa, Tetsuya, Ito, Masahiko, Tsuchida, Hidekazu

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 314 KB

english, 2011

100

Impact of Surface Morphology on the Electrical Properties of Al/Ti Ohmic Contacts on Al-Implanted 4H-SiC

Frazzetto, Alessia, Roccaforte, Fabrizio, Giannazzo, Filippo, Lo Nigro, Raffaella, Bongiorno, Corrado, Di Franco, Salvatore, Weng, Ming Hung, Saggio, Mario, Zanetti, Edoardo, Raineri, Vito

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.47 MB

english, 2011

101

On the Quantification of Al Incorporated in SiC Material Using Particle Induced X-Ray Emission Technique

Soueidan, Maher, Nsouli, Bilal, Ferro, Gabriel, Younes, Ghassan

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 297 KB

english, 2011

102

Comparison between the Piezoresistive Properties of a-SiC Films Obtained by PECVD and Magnetron Sputtering

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 426 KB

english, 2011

103

Low Switching Energy 1200V Normally-Off SiC VJFET Power Modules

Sheridan, David C., Ritenour, Andrew, Bondarenko, Vlad, Casady, Jeff B., Kelley, Robin L.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 960 KB

english, 2011

104

Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na2O2 Additive

Yao, Yong Zhao, Ishikawa, Yukari, Sugawara, Yoshihiro, Saitoh, Hiroaki, Danno, Katsunori, Suzuki, Hiroshi, Kawai, Yoichiro, Shibata, Noriyoshi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.10 MB

english, 2011

105

Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing

Zhang, Xuan, Nagano, Masahiro, Tsuchida, Hidekazu

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.05 MB

english, 2011

106

Theoretical Studies for Si and C Emission into SiC Layer during Oxidation

Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 559 KB

english, 2011

107

Iron-Related Defect Centers in 3C-SiC

Tsirimpis, Thanos, Beljakova, S., Zippelius, Bernd, Weber, Heiko B., Pensl, Gerhard, Krieger, Michael, Nagasawa, Hiroyuki, Kawahara, Takamitsu, Hatta, Naoki, Yagi, Kuniaki, Uchida, Hidetsugu, Kobayash

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 267 KB

english, 2011

108

4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments

Brezeanu, G., Draghici, F., Craciunioiu, F., Boianceanu, C., Bernea, F., Udrea, F., Puscasu, D., Rusu, I.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 809 KB

english, 2011

109

Polarity Control of CVD Grown 3C-SiC on Si(111)

Pezoldt, Jörg, Schröter, Bernd

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 486 KB

english, 2011

110

Evaluation of Curvature and Stress in 3C-SiC Grown on Differently Oriented Si Substrates

Watts, Bernard Enrico, Attolini, Giovanni, Besagni, Tullo, Bosi, Matteo, Ferrari, Claudio, Rossi, Francesca, Riesz, Ferenc, Jiang, Liu Di

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 445 KB

english, 2011

111

Electrically Active Defects in Electron Irradiated P-Type 6H-SiC

Alfieri, Giovanni, Kimoto, Tsunenobu

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 937 KB

english, 2011

112

Complete Determination of the Local Stress Field in Epitaxial Thin Films Using Single Microstructure

Camarda, Massimo, Anzalone, Ruggero, Severino, Andrea, Piluso, Nicolò, La Magna, Antonino, La Via, Francesco

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.55 MB

english, 2011

113

Two-Dimensional Modeling of Aluminum-Ion Implantation into 4H-SiC

Mochizuki, Kazuhiro, Yokoyama, Natsuki

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 292 KB

english, 2011

114

Local Electrical Properties of the 4H-SiC(0001)/Graphene Interface

Sonde, Sushant, Vecchio, Carmelo, Giannazzo, Filippo, Yakimova, Rositza, Rimini, Emanuele, Raineri, Vito

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.59 MB

english, 2011

115

Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron Irradiation

Matsuura, Hideharu, Yanagisawa, Hideki, Nishino, Kozo, Nojiri, Takunori, Onoda, Shinobu, Ohshima, Takeshi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 169 KB

english, 2011

116

Strain Measurements on Nitrogen Implanted 4H-SiC

Amigou, Matthieu, Beaufort, Marie France, Declémy, Alain, Leclerc, Stephanie, Barbot, Jean François

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 335 KB

english, 2011

117

Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy

Trapaidze, Lia, Hollweck, R., Beljakowa, Svetlana, Zippelius, Bernd, Weber, Heiko B., Pensl, Gerhard, Krieger, Michael

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 303 KB

english, 2011

118

Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

Auret, F. Danie, Meyer, Walter E., Diale, M., Janse Van Rensburg, P.J., Song, S.F., Temst, Kristiaan, Vantomme, Andre

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 292 KB

english, 2011

119

Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers

Karpinski, Harald, Sakwe, Sakwe Aloysius, Fried, Michael, Bänsch, Eberhard, Wellmann, Peter J.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 2.64 MB

english, 2011

120

Improving Doping Efficiency of P+ Implanted Ions in 4H-SiC

Nipoti, Roberta, Nath, A., Cristiani, Stefano, Sanmartin, Michele, Rao, Mulpuri V.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 606 KB

english, 2011

121

Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication

Constant, Aurore, Camara, Nicolas, Montserrat, Josep, Pausas, Esther, Camassel, Jean, Godignon, Phillippe

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.18 MB

english, 2011

122

Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching Method

Kozawa, Shigeta, Seki, Kazuaki, Alexander,, Yamamoto, Yuji, Ujihara, Toru, Takeda, Yoshikazu

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 532 KB

english, 2011

123

Characterization of Al-Based High-k Stacked Dielectric Layers Deposited on 4H-SiC by Atomic Layer Deposition

Usman, M., Pilvi, T., Leskelä, Markku, Schöner, Adolf, Hallén, Anders

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.89 MB

english, 2011

124

Experimental Verification of a Novel System for the Growth of SiC Single Crystals

Grasza, Krzysztof, Tymicki, Emil, Racka-Dzietko, Katarzyna, Orzyłowski, Marek

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.16 MB

english, 2011

125

1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

Hull, Brett A., Ryu, Sei Hyung, Zhang, Jon, Jonas, Charlotte, O'Loughlin, Michael J., Callanan, Robert, Palmour, John

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 752 KB

english, 2011

126

Silicon Carbide Vertical JFET with Self-Aligned Nickel Silicide Contacts

Vassilevski, Konstantin, Nikitina, Irina P., Horsfall, Alton B., Wright, Nicolas G., Smith, Andrew J., Johnson, C. Mark

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 760 KB

english, 2011

127

High Temperature Graphene Formation on Capped and Uncapped SiC

Göckeritz, Robert, Schmidt, Denny, Beleites, Moritz, Seifert, Gerhard, Krischok, Stefan P., Himmerlich, Marcel, Pezoldt, Jörg

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 361 KB

english, 2011

128

Understanding the Inversion-Layer Properties of the 4H-SiC/SiO2 Interface

Matocha, Kevin, Tilak, Vinayak

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 373 KB

english, 2011

129

Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na2O2 Etching

Yao, Yong Zhao, Sugawara, Yoshihiro, Ishikawa, Yukari, Saitoh, Hiroaki, Danno, Katsunori, Suzuki, Hiroshi, Kawai, Yoichiro, Shibata, Noriyoshi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.17 MB

english, 2011

130

Growth of SiC Microwires through Si Microwires Carburization

Ollivier, Maelig, Mantoux, Arnaud, Bano, Edwige, Rogdakis, Konstantinos, Zekentes, Konstantinos, Baron, Thierry, Latu-Romain, Laurence

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 2.73 MB

english, 2011

131

Recovery of Ohmic Contacts Formed on C-Face 4H-SiC Following High Temperature Post-Processing

Furnival, Benjamin J.D., Vasilevskiy, Konstantin, Wright, Nicolas G., Horsfall, Alton B.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 471 KB

english, 2011

132

Al-Si-Ti Ohmic Contacts on N-Type Gallium Nitride

Thierry-Jebali, Nicolas, Ménard, Olivier, Yvon, Arnaud, Collard, Emmanuel, Zhe, Miao, Dezellus, Olivier, Brylinski, Christian, Viala, Jean Claude

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 570 KB

english, 2011

133

High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination

Zhang, Jian Hui, Zhao, Jian H., Wang, Xiao Hui, Li, Xue Qing, Fursin, Leonid, Alexandrov, Petre, Gagliardi, Mari Anne, Lange, Mike, Dries, Chris

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 439 KB

english, 2011

134

Thinning of 2-Inch SiC Wafer by Plasma Chemical Vaporization Machining Using Cylindrical Rotary Electrode

Sano, Yasuhisa, Kato, Takehiro, Aida, Kohei, Yamamura, Kazuya, Mimura, Hidekazu, Matsuyama, Satoshi, Yamauchi, Kazuto

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 355 KB

english, 2011

135

Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates – Defects Analysis and Reduction

Kościewicz, Kinga, Strupiński, Wlodek, Teklinska, Dominika, Mazur, Krystyna, Tokarczyk, Mateusz, Kowalski, Grzegorz, Olszyna, Andrzej Roman

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 11.54 MB

english, 2011

136

Investigation of Surface and Interface Morphology of Thermally Grown SiO2 Dielectrics on 4H-SiC(0001) Substrates

Hosoi, Takuji, Konzono, Kohei, Uenishi, Yusuke, Mitani, Shuhei, Nakano, Yuki, Nakamura, Takashi, Shimura, Takayoshi, Watanabe, Heiji

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 4.32 MB

english, 2011

137

Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy

Hens, Philip, Müller, J., Fahlbusch, L., Spiecker, E., Wellmann, Peter J.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 549 KB

english, 2011

138

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

Robert, Teddy, Marinova, Maya, Juillaguet, Sandrine, Henry, Anne, Polychroniadis, Efstathios K., Camassel, Jean

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 500 KB

english, 2011

139

Effects of Process Variations on Silicon Carbide Devices for Extreme Environments

Habib, Hassan, Wright, Nicolas G., Horsfall, Alton B.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 310 KB

english, 2011

140

Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

Nguyen, Duy Minh, Pâques, Gontran, Dheilly, Nicolas, Raynaud, Christophe, Tournier, Dominique, Konrath, Jens Peter, Scharnholz, Sigo, Planson, Dominique

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 356 KB

english, 2011

141

Etch Pits on 4H-SiC Surface Produced by ClF3 Gas

Habuka, Hitoshi, Furukawa, Kazuchika, Tanaka, Keiko, Katsumi, Yusuke, Iizuka, Shinji, Fukae, Katsuya, Kato, Tomohisa

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 511 KB

english, 2011

142

Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO2 Capacitors at Low Temperature Caused by near Interface States

Pintilie, Ioana, Moscatelli, Francesco, Nipoti, Roberta, Poggi, Antonella, Solmi, Sandro, Løvlie, Lars S., Svensson, Bengt G.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 311 KB

english, 2011

143

Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers

Manolis, Georgios, Beshkova, Milena, Syväjärvi, Mikael, Yakimova, Rositza, Jarašiūnas, Kestutis

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 463 KB

english, 2011

144

Graded Etched Junction Termination for SiC Thyristors

Pâques, Gontran, Dheilly, Nicolas, Planson, Dominique, De Doncker, Rik W., Scharnholz, Sigo

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 2.67 MB

english, 2011

145

Optical Triggering of 4H-SiC Thyristors with a 365 nm UV LED

Dheilly, Nicolas, Pâques, Gontran, Planson, Dominique, Bevilacqua, Pascal, Scharnholz, Sigo

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.29 MB

english, 2011

146

3C-SiC MOS Based Devices: From Material Growth to Device Characterization

Lorenzzi, Jean, Esteve, Romain, Jegenyes, Nikoletta, Reshanov, Sergey A., Schöner, Adolf, Ferro, Gabriel

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 539 KB

english, 2011

147

Uniformity of Properties of 4H-SiC CVD Films under Exposure to Radiation

Ivanov, Alexandr M., Strokan, Nikita B., Scherbov, N.A., Lebedev, Alexander A.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 287 KB

english, 2011

148

Reduction in the Density of Interface States at the SiO2/4H-SiC Interface after Dry Oxidation in the Presence of Potassium

Hermannsson, Pétur Gordon, Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 428 KB

english, 2011

149

Cellular Interactions on Epitaxial Graphene on SiC (0001) Substrates

Oliveros, A., Coletti, Camilla, Frewin, Christopher L., Locke, Christopher, Starke, Ulrich, Saddow, Stephen E.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 496 KB

english, 2011

150

Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers

Roccaforte, Fabrizio, Greco, Giuseppe, Weng, Ming Hung, Giannazzo, Filippo, Raineri, Vito

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 625 KB

english, 2011

151

Optically Triggered Power Switch Based on 4H-SiC Vertical JFET

Alexandrov, Petre, Li, Xue Qing, Zhao, Jian H.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 378 KB

english, 2011

152

Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC

Beyer, Franziska Christine, Hemmingsson, Carl, Pedersen, Henrik, Henry, Anne, Isoya, Junichi, Morishita, Norio, Ohshima, Takeshi, Janzén, Erik

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 521 KB

english, 2011

153

Electrical Activity of Structural Defects in 3C-SiC

Eriksson, Jens, Roccaforte, Fabrizio, Weng, Ming Hung, Giannazzo, Filippo, Lorenzzi, Jean, Raineri, Vito

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.32 MB

english, 2011

154

Ohmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices T

Pérez-Tomás, Amador, Fontserè, A., Placidi, Marcel, Baron, N., Chenot, Sébastien, Cordier, Yvon, Moreno, J.C., Gammon, Peter M., Jennings, Michael R.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 382 KB

english, 2011

155

Fabrication of n-Type Nanocrystalline Diamond/3C-SiC/p-Si(001) Junctions

Goto, Masaki, Koga, Akira, Yamada, Kazuhiro, Kato, Yoshimine, Teii, Kungen

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 464 KB

english, 2011

156

Influence of Oxygen on the Absorption of Silicon Carbide Nanoparticles

Vörös, Marton, Deák, Peter, Frauenheim, Thomas, Gali, Adam

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 712 KB

english, 2011

157

Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts

Marinova, Maya, Mantzari, Alkyoni, Sun, Jian Wu, Lorenzzi, Jean, Andreadou, Ariadne, Zoulis, Georgios, Juillaguet, Sandrine, Ferro, Gabriel, Camassel, Jean, Polychroniadis, Efstathios K.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.24 MB

english, 2011

158

Characterization of Fast Switching Capability for Diamond Schottky Barrier Diode

Funaki, Tsuyoshi, Kodama, Kazuya, Umezawa, Hitoshi, Shikata, Shinichi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 296 KB

english, 2011

159

980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction Transistors

Takatsuka, Akio, Tanaka, Yasunori, Yano, Koji, Yatsuo, Tsutomu, Arai, Kazuo

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 685 KB

english, 2011

160

Nondestructive Evaluation of Photo-Electrical Properties of 3C-SiC (111) Homoepitaxial Layers Grown by CVD

Jegenyes, Nikoletta, Manolis, Georgios, Lorenzzi, Jean, Soulière, Veronique, Dompoint, Deborah, Boulle, Alexandre, Ferro, Gabriel, Jarašiūnas, Kestutis

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 446 KB

english, 2011

161

Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC

Koizumi, Atsushi, Iwamoto, Naoya, Onoda, Shinobu, Ohshima, Takeshi, Kimoto, Tsunenobu, Uchida, Kazuo, Nozaki, Shinji

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 2.42 MB

english, 2011

162

Raman Study of Bulk Mobility in 3C-SiC Heteroepitaxy

Piluso, Nicolò, Severino, Andrea, Camarda, Massimo, Canino, Andrea, La Magna, Antonino, La Via, Francesco

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.45 MB

english, 2011

163

Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100ºC to 1500ºC

Yan, F., Espenlaub, A., Devaty, Robert P., Ohshima, Takeshi, Choyke, Wolfgang J.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 398 KB

english, 2011

164

Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a

Dudley, Michael, Wang, Huan Huan, Wu, Fang Zhen, Byrappa, Shayan, Raghothamachar, Balaji, Choi, Gloria, Sanchez, Edward K., Hansen, Darren M., Drachev, Roman, Mueller, Stephan G., Loboda, Mark J.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 4.82 MB

english, 2011

165

Shallow Traps at P-Doped SiO2/4H-SiC(0001) Interface

Okamoto, Dai, Yano, Hiroshi, Kotake, Shinya, Hatayama, Tomoaki, Fuyuki, Takashi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 321 KB

english, 2011

166

Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method

Kusunoki, Kazuhiko, Kamei, Kazuhito, Yashiro, Nobuyoshi, Moriguchi, Koji, Okada, Nobuhiro

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 716 KB

english, 2011

167

Comparative Study on Metallization and Passivation Materials for High Temperature Sensor Applications

Daves, Walter, Krauss, A., Le-Huu, Martin, Kronmüller, S., Häublein, Volker, Bauer, Anton J., Frey, Lothar

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 2.57 MB

english, 2011

168

Abrasive-Free Planarization of 3-Inch 4H-SiC Substrate Using Catalyst-Referred Etching

Okamoto, Takeshi, Sano, Yasuhisa, Tachibana, Kazuma, Arima, Kenta, Hattori, Azusa N., Yagi, Keita, Murata, Junji, Sadakuni, Shun, Yamauchi, Kazuto

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 482 KB

english, 2011

169

β-SiC NWs Grown on Patterned and MEMS Silicon Substrates

Watts, Bernard Enrico, Attolini, Giovanni, Rossi, Francesca, Bosi, Matteo, Salviati, Giancarlo, Mancarella, Fulvio, Ferri, Matteo, Roncaglia, Alberto, Poggi, Antonella

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 5.76 MB

english, 2011

170

Low Earth Orbit Space Environment Testing of Extreme Temperature 6H-SiC JFETs on the International Space Station

Neudeck, Philip G., Prokop, Norman F., Greer III, Lawrence C., Chen, Liang Yu, Krasowski, Michael J.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 2.25 MB

english, 2011

171

600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination

Veliadis, Victor, Urciuoli, Damian, Ha, H.C., Hearne, Harold, Scozzie, Charles

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 554 KB

english, 2011

172

1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)

Kono, Hiroshi, Suzuki, Takuma, Takao, Kazuto, Furukawa, Masaru, Mizukami, Makoto, Ota, Chiharu, Harada, Shinsuke, Senzaki, Junji, Fukuda, Kenji, Shinohe, Takashi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 583 KB

english, 2011

173

Numerical Simulations of a 4H-SiC BMFET Power Transistor with Normally-Off Characteristics

Della Corte, F.G., Pezzimenti, F., Bellone, S., Nipoti, Roberta

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 310 KB

english, 2011

174

Comparison of Total Losses of 1.2 kV SiC JFET and BJT in DC-DC Converter Including Gate Driver

Lim, Jang Kwon, Tolstoy, Georg, Peftitsis, Dimosthenis, Rabkowski, Jacek, Bakowski, Mietek, Nee, Hans Peter

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 763 KB

english, 2011

175

Use of Vacuum as a Gate Dielectric: The SiC VacFET

Speer, Kevin M., Neudeck, Philip G., Mehregany, Mehran

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 842 KB

english, 2011

176

On the Mechanism of Twin Boundary Elimination in 3C-SiC(111) Heteroepitaxial Layers on α-SiC Substrates

Ferro, Gabriel, Kim-Hak, Olivier, Lorenzzi, Jean, Jegenyes, Nikoletta, Marinova, Maya, Soueidan, Maher, Carole, Davy, Polychroniadis, Efstathios K.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 800 KB

english, 2011

177

Fabrication of P-Channel MOSFETs on 4H-SiC C-Face

Okamoto, Mitsuo, Iijima, Miwako, Yatsuo, Tsutomu, Nagano, Takahiro, Fukuda, Kenji, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 324 KB

english, 2011

178

Current Gain Degradation in 4H-SiC Power BJTs

Buono, Benedetto, Ghandi, Reza, Domeij, Martin, Malm, Gunnar, Zetterling, Carl Mikael, Östling, Mikael

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.17 MB

english, 2011

179

Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method

Biondo, Stéphane, Vervisch, Wilfried, Ottaviani, Laurent, Palais, Olivier

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 268 KB

english, 2011

180

Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques

Ščajev, Patrik, Mekys, A., Malinovskis, P., Storasta, Jurgis, Kato, Masashi, Jarašiūnas, Kestutis

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 433 KB

english, 2011

181

Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays

Ohshima, Takeshi, Iwamoto, Naoya, Onoda, Shinobu, Makino, Takahiro, Nozaki, Shinji, Kojima, Kazutoshi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1005 KB

english, 2011

182

Reduction of the Surface Density of Single Shockley Faults by TCS Growth Process

Canino, Andrea, Camarda, Massimo, La Via, Francesco

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 696 KB

english, 2011

183

The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO2 Interface

Pintilie, Ioana, Moscatelli, Francesco, Nipoti, Roberta, Poggi, Antonella, Solmi, Sandro, Løvlie, Lars S., Svensson, Bengt G.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 405 KB

english, 2011

184

On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals

Lebedev, Alexander A., Abramov, Pavel L., Zubrilov, A.S., Bogdanova, Elena V., Lebedev, Sergey P., Seredova, N.V., Tregubova, Alla S.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 471 KB

english, 2011

185

The Strong Field Transport in 4H- and 6H-SiC at Low Temperature

Sankin, Vladimir I., Shkrebiy, Pavel P., Lepneva, Alla A., Ostroumov, Andrey G., Abramov, Pavel L.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 230 KB

english, 2011

186

An Experimental Study of High Voltage SiC PiN Diode Modules Designed for 6.5 KV / 1 KA

Peters, Dethard, Thomas, Bernd, Duetemeyer, T., Hunger, T., Sommer, R.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 647 KB

english, 2011

187

3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring

Vasilevskiy, Konstantin, Nikitina, Irina P., Horsfall, Alton B., Wright, Nicolas G., Johnson, C. Mark

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 294 KB

english, 2011

188

Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes

Zippelius, Bernd, Krieger, Michael, Weber, Heiko B., Pensl, Gerhard, Nagasawa, Hiroyuki, Kawahara, Takamitsu, Hatta, Naoki, Yagi, Kuniaki, Uchida, Hidetsugu, Kobayashi, Motoki

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 540 KB

english, 2011

189

4kV Silicon Carbide MOSFETs

Stum, Zachary, Bolotnikov, A.V., Losee, Peter A., Matocha, Kevin, Arthur, Stephen, Nasadoski, Jeff, Rao, R. Ramakrishna, Saadeh, O.S., Stevanovic, Ljubisa, Myers-Ward, Rachael L., Eddy Jr., Charles R.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 287 KB

english, 2011

190

A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices

Casady, Jeff B., Sheridan, David C., Kelley, Robin L., Bondarenko, Vlad, Ritenour, Andrew

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 495 KB

english, 2011

191

Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability

Fronheiser, Jody A., Chatterjee, Aveek, Grossner, Ulrike, Matocha, Kevin, Tilak, Vinayak, Yu, Liang Chun

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 229 KB

english, 2011

192

Simulation of the Incomplete Ionization of the n-Type Dopant Phosphorus in 4H-SiC, Including Screening by Free Carriers

Scaburri, Raffaele, Desalvo, Agostino, Nipoti, Roberta

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 353 KB

english, 2011

193

1200 V SiC BJTs with Low VCESAT and High Temperature Capability

Domeij, Martin, Lindgren, Anders, Zaring, Carina, Konstantinov, Andrei O., Gumaelius, Krister, Grenell, Hakan, Keri, Imre, Svedberg, Jan Olov, Reimark, Mats

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 416 KB

english, 2011

194

An All Silicon Carbide High Temperature (450+ °C) High Voltage Gain AC Coupled Differential Amplifier

Yang, Jie, Fraley, John, Western, Bryon, Schupbach, Marcelo, Lostetter, Alexander

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 318 KB

english, 2011

195

Temperature Dependent Structural Evolution of Graphene Layers on 4H-SiC(0001)

Sonde, Sushant, Vecchio, Carmelo, Giannazzo, Filippo, Bongiorno, Corrado, Di Franco, Salvatore, Rambach, Martin, Rimini, Emanuele, Raineri, Vito

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.10 MB

english, 2011

196

Structural Investigations of a Sputtered Intermediate Carbonization Layer for 3C-SiC on (111) and (110) Si Substrates

Huguenin-Love, James, Soukup, Rodney J., Ianno, Ned J., Lauer, Noel T.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 8.34 MB

english, 2011

197

Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers

Marinova, Maya, Andreadou, Ariadne, Sun, Jian Wu, Lorenzzi, Jean, Mantzari, Alkyoni, Zoulis, Georgios, Jegenyes, Nikoletta, Juillaguet, Sandrine, Soulière, Veronique, Ferro, Gabriel, Camassel, Jean, P

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 1.64 MB

english, 2011

198

Toward a Better Understanding of Ni-Based Ohmic Contacts on SiC

Tanimoto, Satoshi, Miyabe, Masanori, Shiiyama, Takamitsu, Suzuki, Tatsuhiro, Yamaguchi, Hiroshi, Nakashima, Shinichi, Okumura, Hajime

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 525 KB

english, 2011

199

TEM Observation of 8 Deg Off-Axis 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred Etching

Sadakuni, Shun, Dai, Ngo Xuan, Sano, Yasuhisa, Arima, Kenta, Yagi, Keita, Murata, Junji, Okamoto, Takeshi, Tachibana, Kazuma, Yamauchi, Kazuto

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 307 KB

english, 2011