High-Performance and Robust SRAM Cell Based on Asymmetric...

IEEE Transactions on Electron Devices 2013 / 10 Vol. 60; Iss. 10

High-Performance and Robust SRAM Cell Based on Asymmetric Dual-$k$ Spacer FinFETs

Pal, Pankaj Kumar, Kaushik, Brajesh Kumar, Dasgupta, Sudeb
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2278201
Date:
October, 2013
File:
PDF, 2.84 MB
english, 2013
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