Oxygen precipitation in Czochralski grown silicon heat...

Semiconductor Science and Technology 2000 / 07 Vol. 15; Iss. 7

Oxygen precipitation in Czochralski grown silicon heat treated at 550 °C

Cheung, J, Messoloras, S, Rycroft, S, Stewart, R J, Binns, M J
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Volume:
15
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/15/7/321
Date:
July, 2000
File:
PDF, 174 KB
english, 2000
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