Volume 15; Issue 7

Semiconductor Science and Technology

Volume 15; Issue 7

1

Pack-extraction method combined with inductively coupled plasma mass spectroscopy to monitor metal contaminants on surfaces of silicon wafers

Shimizu, Hirofumi, Ishiwari, Shuichi

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 143 KB

english, 2000

2

Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

Tsatsul'nikov, A F, Krestnikov, I L, Lundin, W V, Sakharov, A V, Kartashova, A P, Usikov, A S, Alferov, Zh I, Ledentsov, N N, Strittmatter, A, Hoffmann, A, Bimberg, D, Soshnikov, I P, Litvinov, D, Ros

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 110 KB

english, 2000

3

Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphology and thermal stability

Kwak, Joon Seop, Mohney, S E, Lin, Je-Yi, Kern, R S

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 224 KB

english, 2000

4

Optical, structural and electrical properties of tin doped indium oxide thin films prepared by spray-pyrolysis technique

Ramaiah, Kodigala Subba, Raja, V Sundara, Bhatnagar, A K, Tomlinson, R D, Pilkington, R D, Hill, A E, Chang, S J, Su, Y K, Juang, F S

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 144 KB

english, 2000

5

Oxygen precipitation in Czochralski grown silicon heat treated at 550 °C

Cheung, J, Messoloras, S, Rycroft, S, Stewart, R J, Binns, M J

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 174 KB

english, 2000

6

Ionization coefficients in Al x Ga 1- x As ( x = 0 - 0.60)

Plimmer, S A, David, J P R, Rees, G J, Robson, P N

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 155 KB

english, 2000

7

An analysis of the dynamic resistance variation as a function of reverse bias voltage in a HgCdTe diode

Singh, S K, Gopal, V, Bhan, R K, Kumar, V

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 93 KB

english, 2000

8

Time-resolved photoluminescence spectroscopy of tunnelling processes in a bipolar AlAs/GaAs resonant-tunnelling structure

Romandic, I, Bouwen, A, Goovaerts, E, Hoof, C Van, Borghs, G

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 263 KB

english, 2000

9

X-ray diffraction, photoluminescence and secondary ion mass spectroscopy study of GaN films grown on Si(111) substrate by vacuum reactive evaporation

Zhang, Haoxiang, Ye, Zhizhen, Zhao, Binghui, Liu, Hongxue

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 87 KB

english, 2000

10

The ferromagnetic p-d exchange interaction in Cd 1- x V x S

Mac, W, Herbich, M, Twardowski, A, Demianiuk, M

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 90 KB

english, 2000

11

Far-infrared stimulated emission tunable by modulation of acoustic phonon scattering in quantum dot structures

Lyanda-Geller, Y, Leburton, J P

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 90 KB

english, 2000

12

Design, processing and characterization of delta-doped channel AlGaAs/InGaAs/GaAs HFETs

Nawaz, M, Miranda, J M, Sakalas, P, Wang, S M, Zhao, Q X, Willander, M, Zirath, H

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 190 KB

english, 2000

13

Advances in low temperature processing of silicon nitride based dielectrics and their applications in surface passivation and integrated optical devices

Agnihotri, O P, Jain, S C, Poortmans, J, Szlufcik, J, Beaucarne, G, Nijs, J, Mertens, R

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 193 KB

english, 2000

14

A new channel of phonon emission induced by metastable centres of highly planar-doped GaAs:Si

Danilchenko, B, Klimashov, A, Asche, M, Hey, R

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 106 KB

english, 2000

15

Optimizing silicon processing for in-line monitoring of metal contamination

Cacciato, A, Evseev, S, Heijden, H J van der

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 423 KB

english, 2000

16

Electrical characterization of ultra-thin gate oxides on Si/Si 1- x - y Ge x C y /Si quantum well heterostructures

Maikap, S, Ray, S K, John, S, Banerjee, S K, Maiti, C K

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 142 KB

english, 2000

17

Monte Carlo simulations of SiGe n-MODFETs with high tensile strained Si channels

Crow, G C, Abram, R A, Yangthaisong, A

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 2.62 MB

english, 2000

18

Characterization of strain relaxation in low-defect-density thin single and step-graded germanium buffer layers by high-resolution two-dimensional x-ray diffraction mapping

Nur, O, Karlsteen, M, Södervall, U, Willander, M, Patel, C J, Hernandez, C, Campidelli, Y, Bensahel, D, Kyutt, R N

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 107 KB

english, 2000

19

Electrical and low frequency noise properties of Gd and GdCo silicide contacts on n-type Si

Dózsa, L, Horváth, Zs J, Molnár, G L, Petõ, G, Dimitriadis, C A, Papadimitriou, L, Brini, J, Kamarinos, G

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 103 KB

english, 2000

20

Ultraviolet B light stimulates hornet activities - a review

Ishay, Jacob S, Kirshboim, Shira

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 717 KB

english, 2000

21

Room-temperature GaAs/AlGaAs multiple-quantum-well optical modulators for the 3-5 µm atmospheric window

Alause, H, Knap, W, Robert, J L, Planel, R, Thierry-Mieg, V, Julien, F H, Zekentes, K, Mosser, V

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 187 KB

english, 2000

22

Photoluminescence properties of homoepitaxial InP films grown by remote plasma MOCVD technique

Perna, G, Capozzi, V, Lorusso, G F, Bruno, G, Losurdo, M, Capezzuto, P

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 150 KB

english, 2000

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