Procedure to derive analytical models for microwave noise...

Semiconductor Science and Technology 2013 / 04 Vol. 28; Iss. 4

Procedure to derive analytical models for microwave noise performances of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors

Ramirez-Garcia, E, Aniel, F P, Enciso-Aguilar, M A, Zerounian, N
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Volume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/4/045003
Date:
April, 2013
File:
PDF, 636 KB
english, 2013
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