Volume 28; Issue 4

Semiconductor Science and Technology

Volume 28; Issue 4

1

Capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator

Kim, Tae-Hyun, Park, Jea-Gun

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 841 KB

english, 2013

2

Structural effects on heat dissipation in InGaAs MHEMTs

Noh, Jinhyun, Ryoo, Yeonmi, Jeon, Namcheol, Cha, Ho-Young, Seo, Kwang-Seok

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 1.39 MB

english, 2013

3

Investigation on a short circuit of large-area OLED lighting panels

Park, J W, Kim, T W, Park, J B

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 1.11 MB

english, 2013

4

Development of ZnTe layers using an electrochemical technique for applications in thin-film solar cells

Fauzi, F, Diso, D G, Echendu, O K, Patel, V, Purandare, Y, Burton, R, Dharmadasa, I M

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 2.06 MB

english, 2013

5

Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers

Grym, Jan, Yatskiv, Roman

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 608 KB

english, 2013

6

High current (1300 A) optical triggering of a 12 kV 4H-SiC thyristor

Rumyantsev, S L, Levinshtein, M E, Shur, M S, Cheng, L, Agarwal, A K, Palmour, J W

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 321 KB

english, 2013

7

Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells

Cappelletti, M A, Casas, G A, Cédola, A P, Peltzer y Blancá, E L

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 727 KB

english, 2013

8

Procedure to derive analytical models for microwave noise performances of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors

Ramirez-Garcia, E, Aniel, F P, Enciso-Aguilar, M A, Zerounian, N

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 636 KB

english, 2013

9

Effect of group-III donors on high-resolution photoluminescence and morphology of ZnO nanowires grown by metalorganic vapour phase epitaxy

Kumar, E Senthil, Anderson, I P, Deng, Z, Mohammadbeigi, F, Wintschel, T, Huang, D, Watkins, S P

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 1.41 MB

english, 2013

10

Asymmetric drain underlap dopant-segregated Schottky barrier ultrathin-body SOI MOSFET for low-power mixed-signal circuits

Patil, Ganesh C, Qureshi, S

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 1.08 MB

english, 2013

11

Conduction mechanisms in 2D and 3D SIS capacitors

Jacqueline, Sébastien, Domengès, Bernadette, Voiron, Frédéric, Murray, Hugues

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 2.23 MB

english, 2013

12

Enhancement of ZnO nanorod arrays-based inverted type hybrid organic solar cell using spin-coated Eosin-Y

Lim, Eng Liang, Yap, Chi Chin, Yahaya, Muhammad, Salleh, Muhamad Mat

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 1.16 MB

english, 2013

13

Integrated 13 GHz ps-pulse-source at 1064 nm

Brox, O, Prziwarka, T, Klehr, A, Bugge, F, Matalla, M, Wenzel, H, Erbert, G

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 694 KB

english, 2013

14

Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy

Guo, Xiaolu, Ma, Wenquan, Huang, Jianliang, Zhang, Yanhua, Wei, Yang, Cui, Kai, Cao, Yulian, Li, Qiong

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 648 KB

english, 2013

15

Efficient premature edge breakdown prevention in SiAPD fabrication using the standard CMOS process

Kamrani, Ehsan, Lesage, Frederic, Sawan, Mohamad

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 429 KB

english, 2013

16

Experimental characterization of peripheral photocurrent in CMOS photodiodes down to 65 nm technology

Blanco-Filgueira, B, López, P, Roldán, J B

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 1.20 MB

english, 2013

17

The role of nickel and titanium in the formation of ohmic contacts on p-type 4H–SiC

Laariedh, F, Lazar, M, Cremillieu, P, Penuelas, J, Leclercq, J-L, Planson, D

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 529 KB

english, 2013

18

Explanation of the photocurrent quantum efficiency (Φ) enhancements through the CAN's model equation for the p-CuI sensitized methylviolet-C 18 LB films in the photoelectrochemical cells (PECs) and Cu/n-Cu 2 O/M-C 18 /p-CuI solid-state photovoltaic cells

Fernando, C A N, Liyanaarachchi, U S, AARajapaksha, R D

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 780 KB

english, 2013

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