Design and Simulation of 5–20-kV GaN Enhancement-Mode...

IEEE Transactions on Electron Devices 2013 / 10 Vol. 60; Iss. 10

Design and Simulation of 5–20-kV GaN Enhancement-Mode Vertical Superjunction HEMT

Li, Zhongda, Chow, T. Paul
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2266544
Date:
October, 2013
File:
PDF, 3.24 MB
english, 2013
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