Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC...

Materials Science Forum 2011 / 3 Vol. 679-680

Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas

Myers-Ward, Rachael L., Nyakiti, Luke O., Hite, Jennifer K., Glembocki, Orest J., Bezares, Francisco J., Caldwell, Joshua D., Imhoff, Eugene A., Hobart, Karl D., Culbertson, James C., Picard, Yoosuf N
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Volume:
679-680
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.679-680.119
Date:
March, 2011
File:
PDF, 1.62 MB
english, 2011
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