Resistive Switching by Voltage-Driven Ion Migration in...

IEEE Transactions on Electron Devices 2012 / 09 Vol. 59; Iss. 9

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

Nardi, Federico, Larentis, Stefano, Balatti, Simone, Gilmer, David C., Ielmini, Daniele
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2012.2202319
Date:
September, 2012
File:
PDF, 1.07 MB
english, 2012
Conversion to is in progress
Conversion to is failed