GaN on Si Technologies for Power Switching Devices

IEEE Transactions on Electron Devices 2013 / 10 Vol. 60; Iss. 10

GaN on Si Technologies for Power Switching Devices

Ishida, Masahiro, Ueda, Tetsuzo, Tanaka, Tsuyoshi, Ueda, Daisuke
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2268577
Date:
October, 2013
File:
PDF, 1.83 MB
english, 2013
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