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Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
Seo, Kyungah, Kim, Insung, Jung, Seungjae, Jo, Minseok, Park, Sangsu, Park, Jubong, Shin, Jungho, Biju, Kuyyadi P, Kong, Jaemin, Lee, Kwanghee, Lee, Byounghun, Hwang, HyunsangVolume:
22
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/22/25/254023
Date:
June, 2011
File:
PDF, 944 KB
english, 2011