Volume 22; Issue 25

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Nanotechnology
Volume 22; Issue 25

Nanotechnology

Volume 22; Issue 25

1

The switching location of a bipolar memristor: chemical, thermal and structural mapping

Strachan, John Paul, Strukov, Dmitri B, Borghetti, Julien, Joshua Yang, J, Medeiros-Ribeiro, Gilberto, Stanley Williams, R

Journal:

Year:

2011

Language:

english

File:

PDF, 617 KB

english, 2011

2

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

Ielmini, D, Nardi, F, Cagli, C

Journal:

Year:

2011

Language:

english

File:

PDF, 815 KB

english, 2011

3

Temperature effects on the switching kinetics of a Cu–Ta2O5-based atomic switch

Tsuruoka, Tohru, Terabe, Kazuya, Hasegawa, Tsuyoshi, Aono, Masakazu

Journal:

Year:

2011

Language:

english

File:

PDF, 3.18 MB

english, 2011

4

Electrochemical metallization memories—fundamentals, applications, prospects

Valov, Ilia, Waser, Rainer, Jameson, John R, Kozicki, Michael N

Journal:

Year:

2011

Language:

english

File:

PDF, 3.00 MB

english, 2011

5

Non-volatile domain nucleation and growth in multiferroic BiFeO 3 films

Chen, Yi-Chun, Wang, Guang-Fu, Tai, Hsiang-Hua, Chen, Jhih-Wei, Huang, Yen-Chin, Yang, Jan-Chi, Chu, Ying-Hao

Journal:

Year:

2011

Language:

english

File:

PDF, 1.30 MB

english, 2011

6

Low voltage cycling of programmable metallization cell memory devices

Kamalanathan, D, Akhavan, A, Kozicki, M N

Journal:

Year:

2011

Language:

english

File:

PDF, 978 KB

english, 2011

7

Fabrication, characterization and simulation of high performance Si nanowire-based non-volatile memory cells

Zhu, Xiaoxiao, Li, Qiliang, Ioannou, Dimitris E, Gu, Diefeng, Bonevich, John E, Baumgart, Helmut, Suehle, John S, Richter, Curt A

Journal:

Year:

2011

Language:

english

File:

PDF, 1.17 MB

english, 2011

8

Scaling limits of resistive memories

Zhirnov, Victor V, Meade, Roy, Cavin, Ralph K, Sandhu, Gurtej

Journal:

Year:

2011

Language:

english

File:

PDF, 1.55 MB

english, 2011

9

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

Kim, Kyung Min, Jeong, Doo Seok, Hwang, Cheol Seong

Journal:

Year:

2011

Language:

english

File:

PDF, 3.04 MB

english, 2011

10

Molecular dynamics simulations of oxide memory resistors (memristors)

Savel’ev, S E, Alexandrov, A S, Bratkovsky, A M, Stanley Williams, R

Journal:

Year:

2011

Language:

english

File:

PDF, 754 KB

english, 2011

11

TiO 2 —a prototypical memristive material

Szot, K, Rogala, M, Speier, W, Klusek, Z, Besmehn, A, Waser, R

Journal:

Year:

2011

Language:

english

File:

PDF, 4.87 MB

english, 2011

12

Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

Seo, Kyungah, Kim, Insung, Jung, Seungjae, Jo, Minseok, Park, Sangsu, Park, Jubong, Shin, Jungho, Biju, Kuyyadi P, Kong, Jaemin, Lee, Kwanghee, Lee, Byounghun, Hwang, Hyunsang

Journal:

Year:

2011

Language:

english

File:

PDF, 944 KB

english, 2011

13

Exchange coupling and exchange bias in La 0.7 Sr 0.3 MnO 3 –SrRuO 3 superlattices

Ziese, M, Pippel, E, Nikulina, E, Arredondo, M, Vrejoiu, I

Journal:

Year:

2011

Language:

english

File:

PDF, 1.31 MB

english, 2011

14

Improvement of resistive switching characteristics in ZrO 2 film by embedding a thin TiO x layer

Li, Yingtao, Long, Shibing, Lv, Hangbing, Liu, Qi, Wang, Yan, Zhang, Sen, Lian, Wentai, Wang, Ming, Zhang, Kangwei, Xie, Hongwei, Liu, Su, Liu, Ming

Journal:

Year:

2011

Language:

english

File:

PDF, 567 KB

english, 2011

15

A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO 2 /Pt structure

Kim, Kyung Min, Choi, Byung Joon, Lee, Min Hwan, Kim, Gun Hwan, Song, Seul Ji, Seok, Jun Yeong, Yoon, Jeong Ho, Han, Seungwu, Hwang, Cheol Seong

Journal:

Year:

2011

Language:

english

File:

PDF, 431 KB

english, 2011

16

Nonlinear I – V relations and hysteresis in solid state devices based on oxide mixed-ionic–electronic conductors

Leshem, A, Gonen, E, Riess, I

Journal:

Year:

2011

Language:

english

File:

PDF, 1.40 MB

english, 2011

17

SiO 2 doped Ge 2 Sb 2 Te 5 thin films with high thermal efficiency for applications in phase change random access memory

Ryu, Seung Wook, Lyeo, Ho-Ki, Lee, Jong Ho, Ahn, Young Bae, Kim, Gun Hwan, Kim, Choon Hwan, Kim, Soo Gil, Lee, Se-Ho, Kim, Ka Young, Kim, Jong Hyeop, Kim, Won, Hwang, Cheol Seong, Kim, Hyeong Joon

Journal:

Year:

2011

Language:

english

File:

PDF, 1.23 MB

english, 2011

18

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO 2 , NiO and Pr 0.7 Ca 0.3 MnO 3

Magyari-Köpe, Blanka, Tendulkar, Mihir, Park, Seong-Geon, Lee, Hyung Dong, Nishi, Yoshio

Journal:

Year:

2011

Language:

english

File:

PDF, 1.72 MB

english, 2011

19

A stacked memory device on logic 3D technology for ultra-high-density data storage

Kim, Jiyoung, Hong, Augustin J, Kim, Sung Min, Shin, Kyeong-Sik, Song, Emil B, Hwang, Yongha, Xiu, Faxian, Galatsis, Kosmas, Chui, Chi On, Candler, Rob N, Choi, Siyoung, Moon, Joo-Tae, Wang, Kang L

Journal:

Year:

2011

Language:

english

File:

PDF, 1.70 MB

english, 2011

20

Scaling and disorder analysis of local I – V curves from ferroelectric thin films of lead zirconate titanate

Maksymovych, Peter, Pan, Minghu, Yu, Pu, Ramesh, Ramamoorthy, Baddorf, Arthur P, Kalinin, Sergei V

Journal:

Year:

2011

Language:

english

File:

PDF, 1.64 MB

english, 2011

21

Non-volatile memory based on nanostructures

Kalinin, Sergei, Yang, J Joshua, Demming, Anna

Journal:

Year:

2011

Language:

english

File:

PDF, 90 KB

english, 2011

22

Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications

Hoffman, J, Hong, X, Ahn, C H

Journal:

Year:

2011

Language:

english

File:

PDF, 287 KB

english, 2011

23

Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films

Shang, Da-Shan, Shi, Lei, Sun, Ji-Rong, Shen, Bao-Gen

Journal:

Year:

2011

Language:

english

File:

PDF, 1.56 MB

english, 2011

24

A study of cycling induced degradation mechanisms in Si nanocrystal memory devices

Jiang, Dandan, Zhang, Manhong, Huo, Zongliang, Wang, Qin, Liu, Jing, Yu, Zhaoan, Yang, Xiaonan, Wang, Yong, Zhang, Bo, Chen, Junning, Liu, Ming

Journal:

Year:

2011

Language:

english

File:

PDF, 541 KB

english, 2011

25

Observation of two resistance switching modes in TiO 2 memristive devices electroformed at low current

Miao, Feng, Joshua Yang, J, Borghetti, Julien, Medeiros-Ribeiro, Gilberto, Stanley Williams, R

Journal:

Year:

2011

Language:

english

File:

PDF, 1.97 MB

english, 2011

26

Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

Stolichnov, I, Riester, S W E, Mikheev, E, Setter, N, Rushforth, A W, Edmonds, K W, Campion, R P, Foxon, C T, Gallagher, B L, Jungwirth, T, Trodahl, H J

Journal:

Year:

2011

Language:

english

File:

PDF, 1.14 MB

english, 2011

27

Experimental investigation of the reliability issue of RRAM based on high resistance state conduction

Zhang, Lijie, Hsu, Yen-Ya, Chen, Frederick T, Lee, Heng-Yuan, Chen, Yu-Sheng, Chen, Wei-Su, Gu, Pei-Yi, Liu, Wen-Hsing, Wang, Shun-Min, Tsai, Chen-Han, Huang, Ru, Tsai, Ming-Jinn

Journal:

Year:

2011

Language:

english

File:

PDF, 430 KB

english, 2011

28

Chalcogenide phase-change memory nanotubes for lower writing current operation

Jung, Yeonwoong, Agarwal, Rahul, Yang, Chung-Ying, Agarwal, Ritesh

Journal:

Year:

2011

Language:

english

File:

PDF, 1.42 MB

english, 2011

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