Trapping and Thermal Effects Analysis for AlGaN/GaN HEMTs...

IEEE Electron Device Letters 2013 / 09 Vol. 34; Iss. 9

Trapping and Thermal Effects Analysis for AlGaN/GaN HEMTs by Means of TCAD Simulations

Miccoli, Cristina, Martino, Valeria Cinnera, Reina, Santo, Rinaudo, Salvatore
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2274326
Date:
September, 2013
File:
PDF, 396 KB
english, 2013
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