Volume 34; Issue 9

IEEE Electron Device Letters

Volume 34; Issue 9

1

Lateral Graphene Heterostructure Field-Effect Transistor

Moon, Jeong S., Seo, Hwa-chang, Stratan, Fred, Antcliffe, Mike, Schmitz, Adele, Ross, Richard S., Kiselev, Andrey A., Wheeler, Virginia D., Nyakiti, Luke O., Gaskill, D. Kurt, Lee, Kang-Mu, Asbeck, Pe

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 319 KB

english, 2013

2

Improving High-Frequency Characteristics of Graphene FETs by Field-Controlling Electrodes

Al-Amin, Chowdhury, Vabbina, Phani Kiran, Karabiyik, Mustafa, Sinha, Raju, Pala, Nezih, Choi, Wongbong

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 671 KB

english, 2013

3

A Traveling-Wave CMOS SPDT Using Slow-Wave Transmission Lines for Millimeter-Wave Application

Tang, Xiao-Lan, Pistono, Emmanuel, Ferrari, Philippe, Fournier, Jean-Michel

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 610 KB

english, 2013

4

Enhanced Performance of P-FET Omega-Gate SoI Nanowire With Recessed-SiGe Source-Drain Down to 13-nm Gate Length

Barraud, Sylvain, Coquand, Remi, Hartmann, Jean-Michel, Maffini-Alvaro, Virginie, Samson, Marie-Pierre, Tosti, Lucie, Allain, Fabienne

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 1.10 MB

english, 2013

5

Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing 10-MHz Switching Operation

Kashiwagi, Junichi, Fujiwara, Tetsuya, Akutsu, Minoru, Ito, Norikazu, Chikamatsu, Kentaro, Nakahara, Ken

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 888 KB

english, 2013

6

High-Speed, Enhancement-Mode GaN Power Switch With Regrown ${\rm n}+$ GaN Ohmic Contacts and Staircase Field Plates

Brown, David F., Shinohara, Keisuke, Corrion, Andrea L., Chu, Rongming, Williams, Adam, Wong, Joel C., Alvarado-Rodriguez, Ivan, Grabar, Robert, Johnson, Michael, Butler, Colleen M., Santos, Dayward,

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 568 KB

english, 2013

7

High Holding Voltage SCR-LDMOS Stacking Structure With Ring-Resistance-Triggered Technique

Ma, Fei, Zhang, Bin, Han, Yan, Zheng, Jianfeng, Song, Bo, Dong, Shurong, Liang, Hailian

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 1.47 MB

english, 2013

8

Performance Improvement in RF LDMOS Transistors Using Wider Drain Contact

Chen, Kun-Ming, Chen, Bo-Yuan, Chiu, Chia-Sung, Huang, Guo-Wei, Chen, Chun-Hao, Lin, Horng-Chih, Huang, Tiao-Yuan, Chen, Ming-Yi, Yang, Yu-Chi, Jaw, Brenda, Wang, Kai-Li

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 480 KB

english, 2013

9

Trapping and Thermal Effects Analysis for AlGaN/GaN HEMTs by Means of TCAD Simulations

Miccoli, Cristina, Martino, Valeria Cinnera, Reina, Santo, Rinaudo, Salvatore

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 396 KB

english, 2013

10

Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs

Liu, Cheng, Liu, Shenghou, Huang, Sen, Chen, Kevin J.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 580 KB

english, 2013

11

Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

Koehler, Andrew D., Nepal, Neeraj, Anderson, Travis J., Tadjer, Marko J., Hobart, Karl D., Eddy, Charles R., Kub, Francis J.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 677 KB

english, 2013

12

Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTs

Lagger, Peter, Schiffmann, Alexander, Pobegen, Gregor, Pogany, Dionyz, Ostermaier, Clemens

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 948 KB

english, 2013

13

Thermal Transient Effect and Improved Junction Temperature Measurement Method in High-Voltage Light-Emitting Diodes

Ye, Huaiyu, Chen, Xianping, van Zeijl, Henk, Gielen, Alexander W. J., Zhang, Guoqi

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 1024 KB

english, 2013

14

Reduced Multilayer Graphene Oxide Floating Gate Flash Memory With Large Memory Window and Robust Retention Characteristics

Mishra, Abhishek, Janardanan, Amritha, Khare, Manali, Kalita, Hemen, Kottantharayil, Anil

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 658 KB

english, 2013

15

Effects of Carrier Concentration, Indium Content, and Crystallinity on the Electrical Properties of Indium-Tin-Zinc-Oxide Thin-Film Transistors

Jang, Kyungsoo, Raja, Jayapal, Lee, Youn-Jung, Kim, Doyoung, Yi, Junsin

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 394 KB

english, 2013

16

Ultraviolet Photodetector Fabricated From Multiwalled Carbon Nanotubes/Zinc-Oxide Nanowires/p-GaN Composite Structure

Shao, Dali, Yu, Mingpeng, Lian, Jie, Sawyer, Shayla M. L.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 719 KB

english, 2013

17

STLM: A Sidewall TLM Structure for Accurate Extraction of Ultralow Specific Contact Resistivity

Majumdar, Kausik, Vivekanand, Saikumar, Huffman, Craig, Matthews, Ken, Ngai, Tat, Chen, Chien Hao, Baek, Rock Hyun, Loh, Wei Yip, Rodgers, Martin, Stamper, Harlan, Gausepohl, Steven, Kang, Chang Yong,

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 1.09 MB

english, 2013

18

Characterization of Multilayer Metal Gate Fuse in 28-nm CMOS Logic Technology

Hsieh, Min-Che, Lin, Yu-Cheng, Chin, Yung-Wen, Chang, Tzong-Sheng, King, Ya-Chin, Lin, Chrong-Jung

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 825 KB

english, 2013

19

Superior Improvements in GIDL and Retention by Fluorine Implantation in Saddle-Fin Array Devices for Sub-40-nm DRAM Technology

Yang, Chia-Ming, Wang, Jer-Chyi, Lee, Wei-Ping, Lee, Chien-Chi, Lin, Chih-Hung, Lee, Chung Yuan, Lin, Jo-Hui, Chen, Hsin-Huei, Hsiao, Chih-Yuan, Chang, Ruey-Dar, Lai, Chao-Sung

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 345 KB

english, 2013

20

Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge ${\rm n}^{+}/{\rm p}$ Diode Achieved by Multiple Implantation and Multiple Annealing Technique

Li, Zhiqiang, An, Xia, Yun, Quanxin, Lin, Meng, Li, Min, Li, Ming, Zhang, Xing, Huang, Ru

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 296 KB

english, 2013

21

Fabrication of High-Performance ZnO Thin-Film Transistors With Submicrometer Channel Length

Lin, Horng-Chih, Lyu, Rong-Jhe, Huang, Tiao-Yuan

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 521 KB

english, 2013

22

Improved Switching Uniformity and Low-Voltage Operation in ${\rm TaO}_{x}$-Based RRAM Using Ge Reactive Layer

Zhuo, Victor Yi-Qian, Jiang, Yu, Zhao, Rong, Shi, Lu Ping, Yang, Yi, Chong, Tow Chong, Robertson, John

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 815 KB

english, 2013

23

High-Temperature Operation of Diamond Junction Field-Effect Transistors With Lateral p-n Junctions

Iwasaki, Takayuki, Hoshino, Yuto, Tsuzuki, Kohei, Kato, Hiromitsu, Makino, Toshiharu, Ogura, Masahiko, Takeuchi, Daisuke, Okushi, Hideyo, Yamasaki, Satoshi, Hatano, Mutsuko

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 1.08 MB

english, 2013

24

High-Performance Flexible ${\rm Ni}/{\rm Sm}_{2}{\rm O}_{3}/{\rm ITO}$ ReRAM Device for Low-Power Nonvolatile Memory Applications

Mondal, Somnath, Chueh, Ching-Hao, Pan, Tung-Ming

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 715 KB

english, 2013

25

500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC

Lanni, Luigia, Malm, Bengt Gunnar, Ostling, Mikael, Zetterling, Carl-Mikael

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 716 KB

english, 2013

26

Highly Scalable Horizontal Channel 3-D NAND Memory Excellent in Compatibility With Conventional Fabrication Technology

Sakuma, Kiwamu, Kusai, Haruka, Fujii, Shosuke, Koyama, Masato

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 1.56 MB

english, 2013

27

Efficient and Accurate Schematic Transistor Model of FinFET Parasitic Elements

Lu, Ning, Hook, Terence B., Johnson, Jeffrey B., Wermer, Carl, Putnam, Christopher, Wachnik, Richard A.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 469 KB

english, 2013

28

New High-Density Differential Split Gate Flash Memory With Self-Boosting Function

Shen, Wen Chao, Lee, Te-Liang, Pan, Hsin-Wei, Yang, Zhi-Sung, Chih, Yue-Der, Lien, Chiu-Wang, King, Ya-Chin, Lin, Chrong Jung

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 552 KB

english, 2013

29

Determination of the Interface States in Amorphous/Crystalline Silicon Using Surface Photovoltage Spectroscopy

Li, Hao, Zeng, Xiangbo, Yang, Ping, Zhang, Xiaodong, Xie, Xiaobing, Li, Jingyan, Wang, Qiming

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 837 KB

english, 2013

30

Compensating Pixel Circuit Driving AMOLED Display With a-IGZO TFTs

Lin, Chih-Lung, Chang, Wen-Yen, Hung, Chia-Che

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 488 KB

english, 2013

31

Development of a Semiempirical Compact Model for DC/AC Cell Operation of ${\rm HfO}_{\rm{x}}$-Based ReRAMs

Noh, Jinwoo, Jo, Minseok, Kang, Chang Yong, Gilmer, David, Kirsch, Paul, Lee, Jack C., Lee, Byoung Hun

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 761 KB

english, 2013

32

Generation Dependence of Retention Characteristics in Extremely Scaled NAND Flash Memory

Kang, Duckseoung, Lee, Kyunghwan, Seo, Seongjun, Kim, Shinhyung, Lee, Ji-Seok, Bae, Dong-Seok, Li, Dong Hua, Hwang, Yuchul, Shin, Hyungcheol

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 925 KB

english, 2013

33

Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application

Fuh, Chur-Shyang, Liu, Po-Tsun, Teng, Li-Feng, Huang, Sih-Wei, Lee, Yao-Jen, Shieh, Han-Ping D., Sze, Simon M.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 388 KB

english, 2013

34

Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films

Hong, Seok Man, Kim, Hee-Dong, An, Ho-Myoung, Kim, Tae Geun

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 541 KB

english, 2013

35

Correction to "Investigation of charge loss mechanism of thickness-scalable trapping layer by variable temperature Kelvin probe force microscopy" [Jul 13 870-872]

Han, Yulong, Huo, Zongliang, Li, Xinkai, Chen, Guoxing, Yang, Xiaonan, Zhang, Dong, Wang, Yong, Ye, Tianchun, Liu, Ming

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 70 KB

english, 2013

36

Reduction of Ohmic Contact Resistance of Solid Phase Regrowth Contacts to n-InGaAs Using a Sulfur Pretreatment

Yearsley, Joshua D., Lin, Joyce C., Mohney, Suzanne E.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 238 KB

english, 2013

37

Improved Rear-Side Passivation by Atomic Layer Deposition ${\rm Al}_{2}{\rm O}_{3}/{\rm SiN}_{x}$ Stack Layers for High $V_{\rm OC}$ Industrial $p$-Type Silicon Solar Cells

Lin, Je-Wei, Chen, Yi-Yang, Gan, Jon-Yiew, Hseih, Wei-Ping, Du, Chen-Hsu, Chao, Tien-Sheng

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 394 KB

english, 2013

38

Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed $\Gamma$-L Valleys

Mehrotra, Saumitra R., Povolotskyi, Michael, Elias, Doron Cohen, Kubis, Tillmann, Law, Jeremy J. M., Rodwell, Mark J. W., Klimeck, Gerhard

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 567 KB

english, 2013

39

High-Speed Voltage-Programmed Pixel Circuit for AMOLED Displays Employing Threshold Voltage One-Time Detection Method

Wu, Wei-Jing, Xia, Xing-Heng, Li, Guan-Ming, Zhou, Lei, Zhang, Li-Rong, Yao, Ruo-He, Peng, Jun-Biao

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 242 KB

english, 2013

40

Superior Electrostrictive Strain Behavior of Antiferroelectric $({\rm Pb}, {\rm La})({\rm Zr}, {\rm Ti}){\rm O}_{3}$ Thick Film Microcantilevers for MEMS Device Applications

Chou, Xiujian, Guan, Xinfeng, Lv, Yongbo, Geng, Wenping, Liu, Jun, Xue, Chenyang, Zhang, Wendong

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 917 KB

english, 2013

41

Electrical Performance Enhancement of Al–Zn-Sn–O Thin Film Transistor by Supercritical Fluid Treatment

Teng, Li-Feng, Liu, Po-Tsun, Wang, Wei-Ya

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 497 KB

english, 2013

42

Correction to “Improved Low-Voltage-Triggered SCR Structure for RF-ESD Protection” [Aug 13 1050-1052]

Ma, Fei, Han, Yan, Dong, Shurong, Miao, Meng, Liang, Hailiang

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 582 KB

english, 2013

43

Table of contents

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 156 KB

english, 2013

44

IEEE International Integrated Reliability Workshop (IIRW)

Journal:

IEEE Electron Device Letters

Year:

2013

File:

PDF, 853 KB

2013

45

IEEE Electron Device Letters information for authors

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 111 KB

english, 2013

46

Table of contents

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 167 KB

english, 2013

47

[Blank page - back cover]

Journal:

IEEE Electron Device Letters

Year:

2013

File:

PDF, 5 KB

2013

48

IEEE Electron Devices Society Meetings Calendar (As of 7/29/2013)

Journal:

IEEE Electron Device Letters

Year:

2013

File:

PDF, 1.08 MB

2013

49

40th IEEE Photovoltaic Specialists Conference

Journal:

IEEE Electron Device Letters

Year:

2013

File:

PDF, 1.06 MB

2013

50

2013 IEEE International Electron Devices Meeting

Journal:

IEEE Electron Device Letters

Year:

2013

File:

PDF, 851 KB

2013

51

IEEE Electron Device Letters publication information

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 149 KB

english, 2013

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