30-GHz Low-Noise Performance of 100-nm-Gate-Recessed...

IEEE Electron Device Letters 2010 / 02 Vol. 31; Iss. 2

30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs

Chia-Ta Chang,, Heng-Tung Hsu,, Chang, E.Y., Chien-I Kuo,, Jui-Chien Huang,, Chung-Yu Lu,, Miyamoto, Y.
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Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2009.2037167
Date:
February, 2010
File:
PDF, 331 KB
english, 2010
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