Volume 31; Issue 2

IEEE Electron Device Letters

Volume 31; Issue 2

1

Impact of Top-Surface Tunnel-Oxide Nitridation on Flash Memory Performance and Reliability

Ganguly, U., Guarini, T., Wellekens, D., Date, L., Cho, Y., Rothschild, A., Swenberg, J.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 408 KB

english, 2010

2

Unipolar Switching Behaviors of RTO RRAM

Chien, W.C., Chen, Y.C., Lai, E.K., Yao, Y.D., Lin, P., Horng, S.F., Gong, J., Chou, T.H., Lin, H.M., Chang, M.N., Shih, Y.H., Hsieh, K.Y., Liu, R., Chih-Yuan Lu

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 505 KB

english, 2010

3

High Ge Content of SiGe Channel pMOSFETs on Si (110) Surfaces

Lee, M.H., Chang, S.T., Maikap, S., Peng, C.-Y., Lee, C.-H.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 490 KB

english, 2010

4

Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate

Medjdoub, F., Derluyn, J., Cheng, K., Leys, M., Degroote, S., Marcon, D., Visalli, D., Van Hove, M., Germain, M., Borghs, G.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 377 KB

english, 2010

5

Comparative Investigation of the Effect of Oxygen Adsorbate and Electrode Work Function on Carbon-Nanotube Field-Effect Transistors

McClain, D., Thomas, N., Youkey, S., Schaller, R., Jun Jiao,, O'Brien, K.P.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 174 KB

english, 2010

6

30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs

Chia-Ta Chang,, Heng-Tung Hsu,, Chang, E.Y., Chien-I Kuo,, Jui-Chien Huang,, Chung-Yu Lu,, Miyamoto, Y.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 331 KB

english, 2010

7

$hbox{Al}_{2}hbox{O}_{3}$ Gate Insulator Grown by ALD]]>

Zhi Hong Liu,, Geok Ing Ng,, Arulkumaran, S., Ye Maung,, Khoon Leng Teo,, Siew Chuen Foo,, Sahmuganathan, V., Tao Xu,, Chee How Lee,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 435 KB

english, 2010

8

Chabak, K.D., Gillespie, J.K., Miller, V., Crespo, A., Roussos, J., Trejo, M., Walker, D.E., Via, G.D., Jessen, G.H., Wasserbauer, J.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 311 KB

english, 2010

9

Comparative Study of Quick Electron Detrapping and Random Telegraph Signal and Their Dependences on Random Discrete Dopant in Sub-40-nm NAND Flash Memory

Taehoon Kim,, Deping He,, Porter, R., Rivers, D., Kessenich, J., Goda, A.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 125 KB

english, 2010

10

Substitution of Paraelectric for Conventional Dielectric in AlGaN/GaN MISFETs

Yuechan Kong,, Fangshi Xue,, Jianjun Zhou,, Liang Li,, Chen Chen,, Yanrong Li,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 415 KB

english, 2010

11

AlGaN/GaN HEMTs With Low Leakage Current and High On/Off Current Ratio

Yu-Syuan Lin,, Yi-Wei Lain,, Hsu, S.S.H.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 309 KB

english, 2010

12

Pentacene-Based Organic Phototransistor With High Sensitivity to Weak Light and Wide Dynamic Range

Hsiao-Wen Zan,, Shih-Chin Kao,, Shiang-Ruei Ouyang,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 209 KB

english, 2010

13

Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications

Yingtao Li,, Shibing Long,, Manhong Zhang,, Qi Liu,, Lubing Shao,, Sen Zhang,, Yan Wang,, Qingyun Zuo,, Su Liu,, Ming Liu,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 478 KB

english, 2010

14

Frequency Effect on Voltage Linearity of $ \hbox{ZrO}_{2}$-Based RF Metal–Insulator–Metal Capacitors

Bertaud, T., Blonkowski, S., Bermond, C., Vallee, C., Gonon, P., Gros-Jean, M., Flechet, B.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 352 KB

english, 2010

15

Silicon X-Ray Detector With Integrated Thin-Film Transistor for Biomedical Applications

Kai Wang,, Karim, K.S.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 261 KB

english, 2010

16

The Impact of Oxide Traps Induced by SOI Thickness on Reliability of Fully Silicide Metal-Gate Strained SOI MOSFET

Cheng-Li Lin,, Yu-Ting Chen,, Fon-Shan Huang,, Wen-Kuan Yeh,, Chien-Ting Lin,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 435 KB

english, 2010

17

Transfer of GaN-Based Light-Emitting Diodes From Silicon Growth Substrate to Copper

Ka Ming Wong,, Xinbo Zou,, Peng Chen,, Kei May Lau,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 142 KB

english, 2010

18

New Layout Arrangement to Improve ESD Robustness of Large-Array High-Voltage nLDMOS

Wen-Yi Chen,, Ming-Dou Ker,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 420 KB

english, 2010

19

A Mechanism for Dependence of Refresh Time on Data Pattern in DRAM

Myoung Jin Lee,, Kun Woo Park,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 609 KB

english, 2010

20

Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell

Sung-Min Yoon,, Chun-Won Byun,, Shinhyuk Yang,, Sang-Hee Ko Park,, Doo-Hee Cho,, Soon-Won Jung,, Seung-Youl Kang,, Chi-Sun Hwang,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 479 KB

english, 2010

21

A GaAs Junction Varactor With a Continuously Tunable Range of 9 : 1 and an $OIP_{3}$ of 57

Cong Huang,, Zampardi, P.J., Buisman, K., Cismaru, C., Sun, M., Stevens, K., Jianli Fu,, Marchetti, M., de Vreede, L.C.N.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 201 KB

english, 2010

22

Normally On/Off Integrated Latching Acceleration Switch With Controlled Fracture Beams and Independent Multicontact

Zhongyang Guo,, Qiancheng Zhao,, Longtao Lin,, Zhenchuan Yang,, Huikai Xie,, Guizhen Yan,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 604 KB

english, 2010

23

Polarity-Dependent Morphological Changes of Ti/TiN/W Via Under High Current Density

Deok-Kee Kim,, Yoondong Park,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 312 KB

english, 2010

24

Investigation of Switching-Time Variations for Nanoscale MOSFETs Using the Effective-Drive-Current Approach

Yu-Sheng Wu,, Ming-Long Fan,, Pin Su,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 222 KB

english, 2010

25

Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs

Tettamanzi, G.C., Paul, A., Lansbergen, G.P., Verduijn, J., Sunhee Lee,, Collaert, N., Biesemans, S., Klimeck, G., Rogge, S.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 365 KB

english, 2010

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