AlGaN/GaN Three-Terminal Junction Devices for Rectification...

IEEE Transactions on Electron Devices 2013 / 10 Vol. 60; Iss. 10

AlGaN/GaN Three-Terminal Junction Devices for Rectification and Transistor Applications on 3C-SiC/Si Pseudosubstrates

Hiller, Lars, Pezoldt, Jorg
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2265741
Date:
October, 2013
File:
PDF, 607 KB
english, 2013
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