Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN...

IEEE Transactions on Electron Devices 2013 / 10 Vol. 60; Iss. 10

Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs

Takashima, Shinya, Li, Zhongda, Chow, T. Paul
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2278185
Date:
October, 2013
File:
PDF, 1.56 MB
english, 2013
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