Improved Vertical Isolation for Normally-Off High Voltage...

IEEE Transactions on Electron Devices 2013 / 10 Vol. 60; Iss. 10

Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates

Hilt, Oliver, Kotara, Przemyslaw, Brunner, Frank, Knauer, Arne, Zhytnytska, Rimma, Wurfl, Joachim
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2259492
Date:
October, 2013
File:
PDF, 1.56 MB
english, 2013
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