High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$
Freedsman, Joseph Jesudass, Kubo, Toshiharu, Egawa, TakashiVolume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2276437
Date:
October, 2013
File:
PDF, 1.00 MB
english, 2013