AlGaN/GaN-Based HEMTs Failure Physics and Reliability:...

IEEE Transactions on Electron Devices 2013 / 10 Vol. 60; Iss. 10

AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

Zanoni, Enrico, Meneghini, Matteo, Chini, Alessandro, Marcon, Denis, Meneghesso, Gaudenzio
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2271954
Date:
October, 2013
File:
PDF, 2.08 MB
english, 2013
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